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P105CH02CJ PDF预览

P105CH02CJ

更新时间: 2024-11-20 17:34:55
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
2页 257K
描述
Silicon Controlled Rectifier, 490A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-200AB

P105CH02CJ 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CEDB-N2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.30.00.80风险等级:5.84
其他特性:HIGH RELIABILITY标称电路换相断开时间:25 µs
配置:SINGLE关态电压最小值的临界上升速率:20 V/us
最大直流栅极触发电流:200 mA最大直流栅极触发电压:3 V
最大维持电流:600 mAJEDEC-95代码:TO-200AB
JESD-30 代码:O-CEDB-N2元件数量:1
端子数量:2封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
认证状态:Not Qualified最大均方根通态电流:490 A
重复峰值关态漏电流最大值:20000 µA断态重复峰值电压:200 V
重复峰值反向电压:200 V表面贴装:YES
端子形式:NO LEAD端子位置:END
触发设备类型:SCRBase Number Matches:1

P105CH02CJ 数据手册

 浏览型号P105CH02CJ的Datasheet PDF文件第2页 

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P105CH02CJ0 IXYS

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Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,200V V(DRM),395A I(T),TO-200AB
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Silicon Controlled Rectifier, 490A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element
P105CH02CK0 IXYS

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Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,200V V(DRM),395A I(T),TO-200AB
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Silicon Controlled Rectifier, 490A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element
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Silicon Controlled Rectifier, 490A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-200AB
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Silicon Controlled Rectifier, 395000mA I(T), 200V V(DRM)
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Silicon Controlled Rectifier, 490A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element
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Silicon Controlled Rectifier, 490 A, 200 V, SCR
P105CH02CN0 LITTELFUSE

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Silicon Controlled Rectifier, 395000mA I(T), 200V V(DRM),
P105CH02DHO IXYS

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Silicon Controlled Rectifier, 490 A, 200 V, SCR