生命周期: | Obsolete | 包装说明: | DISK BUTTON, O-CEDB-N2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.30.00.80 | 风险等级: | 5.84 |
其他特性: | HIGH RELIABILITY | 标称电路换相断开时间: | 15 µs |
配置: | SINGLE | 关态电压最小值的临界上升速率: | 50 V/us |
最大直流栅极触发电流: | 200 mA | 最大直流栅极触发电压: | 3 V |
最大维持电流: | 600 mA | JEDEC-95代码: | TO-200AB |
JESD-30 代码: | O-CEDB-N2 | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | ROUND | 封装形式: | DISK BUTTON |
认证状态: | Not Qualified | 最大均方根通态电流: | 490 A |
重复峰值关态漏电流最大值: | 20000 µA | 断态重复峰值电压: | 200 V |
重复峰值反向电压: | 200 V | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | END |
触发设备类型: | SCR |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
P105CH02DL0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 395000mA I(T), 200V V(DRM) | |
P105CH02DM | IXYS |
获取价格 |
Silicon Controlled Rectifier, 490A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-200AB | |
P105CH02DM0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 395000mA I(T), 200V V(DRM) | |
P105CH02DMO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 490A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element | |
P105CH02DN0 | LITTELFUSE |
获取价格 |
Silicon Controlled Rectifier, 395000mA I(T), 200V V(DRM), | |
P105CH02EHO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 490 A, 200 V, SCR | |
P105CH02EJ | IXYS |
获取价格 |
Silicon Controlled Rectifier, 490 A, 200 V, SCR, TO-200AB | |
P105CH02EJO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 490 A, 200 V, SCR | |
P105CH02EK | IXYS |
获取价格 |
Silicon Controlled Rectifier, 490A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-200AB | |
P105CH02EK0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 395000mA I(T), 200V V(DRM) |