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P105CH02EN0 PDF预览

P105CH02EN0

更新时间: 2024-11-24 19:04:07
品牌 Logo 应用领域
力特 - LITTELFUSE 栅极
页数 文件大小 规格书
6页 698K
描述
Silicon Controlled Rectifier, 395000mA I(T), 200V V(DRM),

P105CH02EN0 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.08标称电路换相断开时间:10 µs
关态电压最小值的临界上升速率:100 V/us最大直流栅极触发电流:200 mA
最大直流栅极触发电压:3 V最大维持电流:600 mA
最大漏电流:20 mA通态非重复峰值电流:2200 A
最大通态电压:1.92 V最大通态电流:395000 A
最高工作温度:125 °C最低工作温度:-40 °C
断态重复峰值电压:200 V子类别:Silicon Controlled Rectifiers
表面贴装:NO触发设备类型:SCR
Base Number Matches:1

P105CH02EN0 数据手册

 浏览型号P105CH02EN0的Datasheet PDF文件第2页浏览型号P105CH02EN0的Datasheet PDF文件第3页浏览型号P105CH02EN0的Datasheet PDF文件第4页浏览型号P105CH02EN0的Datasheet PDF文件第5页浏览型号P105CH02EN0的Datasheet PDF文件第6页 

与P105CH02EN0相关器件

型号 品牌 获取价格 描述 数据表
P105CH02FH0 IXYS

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Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,200V V(DRM),395A I(T),TO-200AB
P105CH02FJ IXYS

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Silicon Controlled Rectifier, 490A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-200AB
P105CH02FJ0 IXYS

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Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,200V V(DRM),395A I(T),TO-200AB
P105CH02FJO IXYS

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Silicon Controlled Rectifier, 490 A, 200 V, SCR
P105CH02FK0 IXYS

获取价格

Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,200V V(DRM),395A I(T),TO-200AB
P105CH02FKO IXYS

获取价格

Silicon Controlled Rectifier, 490A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element
P105CH02FL IXYS

获取价格

Silicon Controlled Rectifier, 490A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-200AB
P105CH02FL0 IXYS

获取价格

Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,200V V(DRM),395A I(T),TO-200AB
P105CH02FN0 LITTELFUSE

获取价格

Silicon Controlled Rectifier, 395000mA I(T), 200V V(DRM),
P105CH04CH0 IXYS

获取价格

Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,400V V(DRM),395A I(T),TO-200AB