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P105CH02EJO PDF预览

P105CH02EJO

更新时间: 2024-11-25 07:20:31
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
2页 257K
描述
Silicon Controlled Rectifier, 490 A, 200 V, SCR

P105CH02EJO 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CEDB-N2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.30.00.80风险等级:5.84
其他特性:HIGH RELIABILITY配置:SINGLE
最大直流栅极触发电流:200 mAJESD-30 代码:O-CEDB-N2
元件数量:1端子数量:2
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON认证状态:Not Qualified
最大均方根通态电流:490 A断态重复峰值电压:200 V
重复峰值反向电压:200 V表面贴装:YES
端子形式:NO LEAD端子位置:END
触发设备类型:SCR

P105CH02EJO 数据手册

 浏览型号P105CH02EJO的Datasheet PDF文件第2页 

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P105CH02EK IXYS

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Silicon Controlled Rectifier, 490A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-200AB
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Silicon Controlled Rectifier, 395000mA I(T), 200V V(DRM)
P105CH02EKO IXYS

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Silicon Controlled Rectifier, 490A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element
P105CH02EL IXYS

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Silicon Controlled Rectifier, 490A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-200AB
P105CH02EL0 IXYS

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Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,200V V(DRM),395A I(T),TO-200AB
P105CH02EM IXYS

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Silicon Controlled Rectifier, 490A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-200AB
P105CH02EMO IXYS

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Silicon Controlled Rectifier, 490A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element
P105CH02EN0 LITTELFUSE

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Silicon Controlled Rectifier, 395000mA I(T), 200V V(DRM),
P105CH02FH0 IXYS

获取价格

Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,200V V(DRM),395A I(T),TO-200AB
P105CH02FJ IXYS

获取价格

Silicon Controlled Rectifier, 490A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-200AB