5秒后页面跳转
P095CH04EJ PDF预览

P095CH04EJ

更新时间: 2024-09-20 08:20:43
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
2页 257K
描述
Silicon Controlled Rectifier, 428A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB

P095CH04EJ 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CEDB-N2
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84其他特性:HIGH RELIABILITY
标称电路换相断开时间:25 µs配置:SINGLE
关态电压最小值的临界上升速率:100 V/us最大直流栅极触发电流:200 mA
最大直流栅极触发电压:3 V最大维持电流:600 mA
JEDEC-95代码:TO-200ABJESD-30 代码:O-CEDB-N2
元件数量:1端子数量:2
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON认证状态:Not Qualified
最大均方根通态电流:428 A重复峰值关态漏电流最大值:20000 µA
断态重复峰值电压:400 V重复峰值反向电压:400 V
表面贴装:YES端子形式:NO LEAD
端子位置:END触发设备类型:SCR

P095CH04EJ 数据手册

 浏览型号P095CH04EJ的Datasheet PDF文件第2页 

与P095CH04EJ相关器件

型号 品牌 获取价格 描述 数据表
P095CH04EJ0 IXYS

获取价格

Silicon Controlled Rectifier, 356000mA I(T), 400V V(DRM)
P095CH04F2K IXYS

获取价格

Silicon Controlled Rectifier, 428 A, 400 V, SCR, TO-200AB
P095CH04F2K0 IXYS

获取价格

Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,400V V(DRM),356A I(T),TO-200AB
P095CH04F2KO IXYS

获取价格

Silicon Controlled Rectifier, 428A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element
P095CH04FG0 IXYS

获取价格

Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,400V V(DRM),356A I(T),TO-200AB
P095CH04FH IXYS

获取价格

Silicon Controlled Rectifier, 428 A, 400 V, SCR, TO-200AB
P095CH04FH0 IXYS

获取价格

Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,400V V(DRM),356A I(T),TO-200AB
P095CH04FHO IXYS

获取价格

Silicon Controlled Rectifier, 428A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element
P095CH04FJ IXYS

获取价格

Silicon Controlled Rectifier, 428A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB
P095CH04FJ0 IXYS

获取价格

Silicon Controlled Rectifier, 356000mA I(T), 400V V(DRM)