生命周期: | Obsolete | 包装说明: | DISK BUTTON, O-CEDB-N2 |
Reach Compliance Code: | unknown | HTS代码: | 8541.30.00.80 |
风险等级: | 5.84 | Is Samacsys: | N |
其他特性: | HIGH RELIABILITY | 标称电路换相断开时间: | 25 µs |
配置: | SINGLE | 关态电压最小值的临界上升速率: | 200 V/us |
最大直流栅极触发电流: | 200 mA | 最大直流栅极触发电压: | 3 V |
最大维持电流: | 600 mA | JEDEC-95代码: | TO-200AB |
JESD-30 代码: | O-CEDB-N2 | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | ROUND | 封装形式: | DISK BUTTON |
认证状态: | Not Qualified | 最大均方根通态电流: | 428 A |
重复峰值关态漏电流最大值: | 20000 µA | 断态重复峰值电压: | 400 V |
重复峰值反向电压: | 400 V | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | END |
触发设备类型: | SCR | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
P095CH04FJ0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 356000mA I(T), 400V V(DRM) | |
P095CH04FJO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 428A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element | |
P095CH05C2K | IXYS |
获取价格 |
Silicon Controlled Rectifier, 428A I(T)RMS, 500V V(DRM), 500V V(RRM), 1 Element, TO-200AB | |
P095CH05CG | IXYS |
获取价格 |
Silicon Controlled Rectifier, 428A I(T)RMS, 500V V(DRM), 500V V(RRM), 1 Element, TO-200AB | |
P095CH05CH | IXYS |
获取价格 |
Silicon Controlled Rectifier, 428 A, 500 V, SCR, TO-200AB | |
P095CH05CJ | IXYS |
获取价格 |
Silicon Controlled Rectifier, 428 A, 500 V, SCR, TO-200AB | |
P095CH05D2K | IXYS |
获取价格 |
Silicon Controlled Rectifier, 428A I(T)RMS, 500V V(DRM), 500V V(RRM), 1 Element, TO-200AB | |
P095CH05DH | IXYS |
获取价格 |
Silicon Controlled Rectifier, 428A I(T)RMS, 500V V(DRM), 500V V(RRM), 1 Element, TO-200AB | |
P095CH05DJ | IXYS |
获取价格 |
Silicon Controlled Rectifier, 428A I(T)RMS, 500V V(DRM), 500V V(RRM), 1 Element, TO-200AB | |
P095CH05E2K | IXYS |
获取价格 |
Silicon Controlled Rectifier, 428A I(T)RMS, 500V V(DRM), 500V V(RRM), 1 Element, TO-200AB |