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P095CH04FJ PDF预览

P095CH04FJ

更新时间: 2024-11-29 17:01:07
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
2页 257K
描述
Silicon Controlled Rectifier, 428A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB

P095CH04FJ 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CEDB-N2
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84Is Samacsys:N
其他特性:HIGH RELIABILITY标称电路换相断开时间:25 µs
配置:SINGLE关态电压最小值的临界上升速率:200 V/us
最大直流栅极触发电流:200 mA最大直流栅极触发电压:3 V
最大维持电流:600 mAJEDEC-95代码:TO-200AB
JESD-30 代码:O-CEDB-N2元件数量:1
端子数量:2封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
认证状态:Not Qualified最大均方根通态电流:428 A
重复峰值关态漏电流最大值:20000 µA断态重复峰值电压:400 V
重复峰值反向电压:400 V表面贴装:YES
端子形式:NO LEAD端子位置:END
触发设备类型:SCRBase Number Matches:1

P095CH04FJ 数据手册

 浏览型号P095CH04FJ的Datasheet PDF文件第2页 

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Silicon Controlled Rectifier, 428A I(T)RMS, 500V V(DRM), 500V V(RRM), 1 Element, TO-200AB
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Silicon Controlled Rectifier, 428A I(T)RMS, 500V V(DRM), 500V V(RRM), 1 Element, TO-200AB
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Silicon Controlled Rectifier, 428A I(T)RMS, 500V V(DRM), 500V V(RRM), 1 Element, TO-200AB