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P095CH02FJO PDF预览

P095CH02FJO

更新时间: 2024-11-29 13:23:59
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
2页 260K
描述
Silicon Controlled Rectifier, 428A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element

P095CH02FJO 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CEDB-N2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.30.00.80风险等级:5.84
其他特性:HIGH RELIABILITY配置:SINGLE
最大直流栅极触发电流:200 mAJESD-30 代码:O-CEDB-N2
元件数量:1端子数量:2
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON认证状态:Not Qualified
最大均方根通态电流:428 A断态重复峰值电压:200 V
重复峰值反向电压:200 V表面贴装:YES
端子形式:NO LEAD端子位置:END
触发设备类型:SCRBase Number Matches:1

P095CH02FJO 数据手册

 浏览型号P095CH02FJO的Datasheet PDF文件第2页 

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Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,400V V(DRM),356A I(T),TO-200AB
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Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,400V V(DRM),356A I(T),TO-200AB
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Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,400V V(DRM),356A I(T),TO-200AB
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Silicon Controlled Rectifier, 428A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB
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Silicon Controlled Rectifier, 356000mA I(T), 400V V(DRM)
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Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,400V V(DRM),356A I(T),TO-200AB
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Silicon Controlled Rectifier, 428 A, 400 V, SCR