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P095CH04DH0 PDF预览

P095CH04DH0

更新时间: 2024-11-09 07:58:23
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
4页 304K
描述
Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,400V V(DRM),356A I(T),TO-200AB

P095CH04DH0 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84标称电路换相断开时间:30 µs
关态电压最小值的临界上升速率:50 V/us最大直流栅极触发电流:200 mA
最大直流栅极触发电压:3 V最大维持电流:600 mA
最大漏电流:20 mA通态非重复峰值电流:1800 A
最大通态电流:356000 A最高工作温度:125 °C
最低工作温度:-40 °C断态重复峰值电压:400 V
子类别:Silicon Controlled Rectifiers表面贴装:NO
触发设备类型:SCRBase Number Matches:1

P095CH04DH0 数据手册

 浏览型号P095CH04DH0的Datasheet PDF文件第2页浏览型号P095CH04DH0的Datasheet PDF文件第3页浏览型号P095CH04DH0的Datasheet PDF文件第4页 

与P095CH04DH0相关器件

型号 品牌 获取价格 描述 数据表
P095CH04DHO IXYS

获取价格

Silicon Controlled Rectifier, 428 A, 400 V, SCR
P095CH04DJ IXYS

获取价格

Silicon Controlled Rectifier, 428A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB
P095CH04DJ0 IXYS

获取价格

Silicon Controlled Rectifier, 356000mA I(T), 400V V(DRM)
P095CH04DJO IXYS

获取价格

Silicon Controlled Rectifier, 428A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element
P095CH04E2K IXYS

获取价格

Silicon Controlled Rectifier, 428 A, 400 V, SCR, TO-200AB
P095CH04E2K0 IXYS

获取价格

Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,400V V(DRM),356A I(T),TO-200AB
P095CH04E2KO IXYS

获取价格

Silicon Controlled Rectifier, 428A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element
P095CH04EH IXYS

获取价格

Silicon Controlled Rectifier, 428A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB
P095CH04EH0 IXYS

获取价格

Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,400V V(DRM),356A I(T),TO-200AB
P095CH04EHO IXYS

获取价格

Silicon Controlled Rectifier, 428A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element