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P095CH04E2K PDF预览

P095CH04E2K

更新时间: 2024-11-09 08:11:59
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
2页 257K
描述
Silicon Controlled Rectifier, 428 A, 400 V, SCR, TO-200AB

P095CH04E2K 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CEDB-N2
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84其他特性:HIGH RELIABILITY
标称电路换相断开时间:40 µs配置:SINGLE
关态电压最小值的临界上升速率:100 V/us最大直流栅极触发电流:200 mA
最大直流栅极触发电压:3 V最大维持电流:600 mA
JEDEC-95代码:TO-200ABJESD-30 代码:O-CEDB-N2
元件数量:1端子数量:2
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON认证状态:Not Qualified
最大均方根通态电流:428 A重复峰值关态漏电流最大值:20000 µA
断态重复峰值电压:400 V重复峰值反向电压:400 V
表面贴装:YES端子形式:NO LEAD
端子位置:END触发设备类型:SCR
Base Number Matches:1

P095CH04E2K 数据手册

 浏览型号P095CH04E2K的Datasheet PDF文件第2页 

与P095CH04E2K相关器件

型号 品牌 获取价格 描述 数据表
P095CH04E2K0 IXYS

获取价格

Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,400V V(DRM),356A I(T),TO-200AB
P095CH04E2KO IXYS

获取价格

Silicon Controlled Rectifier, 428A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element
P095CH04EH IXYS

获取价格

Silicon Controlled Rectifier, 428A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB
P095CH04EH0 IXYS

获取价格

Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,400V V(DRM),356A I(T),TO-200AB
P095CH04EHO IXYS

获取价格

Silicon Controlled Rectifier, 428A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element
P095CH04EJ IXYS

获取价格

Silicon Controlled Rectifier, 428A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB
P095CH04EJ0 IXYS

获取价格

Silicon Controlled Rectifier, 356000mA I(T), 400V V(DRM)
P095CH04F2K IXYS

获取价格

Silicon Controlled Rectifier, 428 A, 400 V, SCR, TO-200AB
P095CH04F2K0 IXYS

获取价格

Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,400V V(DRM),356A I(T),TO-200AB
P095CH04F2KO IXYS

获取价格

Silicon Controlled Rectifier, 428A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element