生命周期: | Obsolete | 包装说明: | DISK BUTTON, O-CEDB-N2 |
Reach Compliance Code: | unknown | HTS代码: | 8541.30.00.80 |
风险等级: | 5.84 | 其他特性: | HIGH RELIABILITY |
标称电路换相断开时间: | 40 µs | 配置: | SINGLE |
关态电压最小值的临界上升速率: | 100 V/us | 最大直流栅极触发电流: | 200 mA |
最大直流栅极触发电压: | 3 V | 最大维持电流: | 600 mA |
JEDEC-95代码: | TO-200AB | JESD-30 代码: | O-CEDB-N2 |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | ROUND |
封装形式: | DISK BUTTON | 认证状态: | Not Qualified |
最大均方根通态电流: | 428 A | 重复峰值关态漏电流最大值: | 20000 µA |
断态重复峰值电压: | 400 V | 重复峰值反向电压: | 400 V |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | END | 触发设备类型: | SCR |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
P095CH04E2K0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,400V V(DRM),356A I(T),TO-200AB | |
P095CH04E2KO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 428A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element | |
P095CH04EH | IXYS |
获取价格 |
Silicon Controlled Rectifier, 428A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB | |
P095CH04EH0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,400V V(DRM),356A I(T),TO-200AB | |
P095CH04EHO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 428A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element | |
P095CH04EJ | IXYS |
获取价格 |
Silicon Controlled Rectifier, 428A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB | |
P095CH04EJ0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 356000mA I(T), 400V V(DRM) | |
P095CH04F2K | IXYS |
获取价格 |
Silicon Controlled Rectifier, 428 A, 400 V, SCR, TO-200AB | |
P095CH04F2K0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,400V V(DRM),356A I(T),TO-200AB | |
P095CH04F2KO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 428A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element |