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P095CH02FH0 PDF预览

P095CH02FH0

更新时间: 2024-11-30 06:15:11
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
4页 304K
描述
Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,200V V(DRM),356A I(T),TO-200AB

P095CH02FH0 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84标称电路换相断开时间:30 µs
关态电压最小值的临界上升速率:200 V/us最大直流栅极触发电流:200 mA
最大直流栅极触发电压:3 V最大维持电流:600 mA
最大漏电流:20 mA通态非重复峰值电流:1800 A
最大通态电流:356000 A最高工作温度:125 °C
最低工作温度:-40 °C断态重复峰值电压:200 V
子类别:Silicon Controlled Rectifiers表面贴装:NO
触发设备类型:SCRBase Number Matches:1

P095CH02FH0 数据手册

 浏览型号P095CH02FH0的Datasheet PDF文件第2页浏览型号P095CH02FH0的Datasheet PDF文件第3页浏览型号P095CH02FH0的Datasheet PDF文件第4页 

与P095CH02FH0相关器件

型号 品牌 获取价格 描述 数据表
P095CH02FHO IXYS

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Silicon Controlled Rectifier, 428A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element
P095CH02FJ IXYS

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Silicon Controlled Rectifier, 356000mA I(T), 200V V(DRM)
P095CH02FJO IXYS

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Silicon Controlled Rectifier, 428A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element
P095CH04C2K0 IXYS

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Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,400V V(DRM),356A I(T),TO-200AB
P095CH04CG0 IXYS

获取价格

Silicon Controlled Rectifier, 356000mA I(T), 400V V(DRM)
P095CH04CGO IXYS

获取价格

Silicon Controlled Rectifier, 428A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element
P095CH04CHO IXYS

获取价格

Silicon Controlled Rectifier, 428A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element
P095CH04CJ IXYS

获取价格

Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,400V V(DRM),356A I(T),TO-200AB
P095CH04D2K0 IXYS

获取价格

Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,400V V(DRM),356A I(T),TO-200AB
P095CH04DG IXYS

获取价格

Silicon Controlled Rectifier, 428A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB