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P0366WC08A PDF预览

P0366WC08A

更新时间: 2024-10-28 17:35:51
品牌 Logo 应用领域
力特 - LITTELFUSE 栅极
页数 文件大小 规格书
12页 1591K
描述
Silicon Controlled Rectifier, 590000mA I(T), 800V V(DRM),

P0366WC08A 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.19标称电路换相断开时间:10 µs
关态电压最小值的临界上升速率:200 V/us最大直流栅极触发电流:200 mA
最大直流栅极触发电压:3 V最大维持电流:600 mA
最大漏电流:30 mA通态非重复峰值电流:5170 A
最大通态电流:590000 A最高工作温度:125 °C
最低工作温度:-40 °C断态重复峰值电压:800 V
子类别:Silicon Controlled Rectifiers触发设备类型:SCR
Base Number Matches:1

P0366WC08A 数据手册

 浏览型号P0366WC08A的Datasheet PDF文件第2页浏览型号P0366WC08A的Datasheet PDF文件第3页浏览型号P0366WC08A的Datasheet PDF文件第4页浏览型号P0366WC08A的Datasheet PDF文件第5页浏览型号P0366WC08A的Datasheet PDF文件第6页浏览型号P0366WC08A的Datasheet PDF文件第7页 
Date:- 02 August 2012  
Data Sheet Issue:- K1  
Fast Turn-off Thyristor  
Types P0366WC04# & P0366WC08#  
Absolute Maximum Ratings  
MAXIMUM  
LIMITS  
VOLTAGE RATINGS  
UNITS  
VDRM  
VDSM  
VRRM  
VRSM  
Repetitive peak off-state voltage, (note 1)  
Non-repetitive peak off-state voltage, (note 1)  
Repetitive peak reverse voltage, (note 1)  
Non-repetitive peak reverse voltage, (note 1)  
400-800  
V
V
V
V
400-800  
400-800  
500-900  
MAXIMUM  
LIMITS  
366  
OTHER RATINGS  
UNITS  
IT(AV)  
IT(AV)  
IT(RMS)  
IT(d.c.)  
ITSM  
ITSM2  
I2t  
Mean on-state current, Tsink=55°C, (note 2)  
Mean on-state current. Tsink=85°C, (note 2)  
Nominal RMS on-state current, Tsink=25°C, (note 2)  
D.C. on-state current, Tsink=25°C, (note 4)  
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)  
Peak non-repetitive surge tp=10ms, VRM10V, (note 5)  
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)  
I2t capacity for fusing tp=10ms, VRM10V, (note 5)  
Maximum rate of rise of on-state current (repetitive), (Note 6)  
Maximum rate of rise of on-state current (non-repetitive), (Note 6)  
Peak forward gate voltage  
A
A
130  
756  
A
590  
A
4700  
5170  
110×103  
134×103  
500  
A
A
A2s  
A2s  
A/µs  
A/µs  
V
I2t  
(di/dt)cr  
1000  
12  
VFGM  
IFGM  
VRGM  
PG(AV)  
PGM  
VGD  
Peak forward gate current  
18  
A
Peak reverse gate voltage  
5
V
Mean forward gate power  
1.5  
W
W
V
Peak forward gate power (100µs pulse width)  
Non-trigger gate voltage, (Note 7)  
60  
0.25  
THS  
Operating temperature range  
-40 to +125  
-40 to +150  
°C  
°C  
Tstg  
Storage temperature range  
Notes:-  
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.  
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.  
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.  
4) Double side cooled.  
5) Half-sinewave, 125°C Tj initial.  
6) VD=80% VDRM, IFG=1A, tr1µs, Tcase=125°C.  
7) Rated VDRM  
.
Data Sheet. Types P0366WC04#-08# Issue K1  
Page 1 of 12  
August 2012  

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