Datasheet > P0367WC12F

P0367WC12F

更新时间： 2024-02-29 00:02:23

品牌	Logo	应用领域
力特 - LITTELFUSE		栅栅极
页数	文件大小	规格书
12页	1608K
描述
Silicon Controlled Rectifier, 740A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AB, 3 PIN

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技术参数
数据手册

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P0367WC12F 技术参数

是否Rohs认证：	符合	生命周期：	Not Recommended
包装说明：	TO-200AB, 3 PIN	Reach Compliance Code：	compliant
风险等级：	5.32	配置：	SINGLE
最大直流栅极触发电流：	200 mA	JESD-30 代码：	O-CXDB-X3
元件数量：	1	端子数量：	3
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装形状：	ROUND
封装形式：	DISK BUTTON	认证状态：	Not Qualified
最大均方根通态电流：	740 A	断态重复峰值电压：	1200 V
重复峰值反向电压：	1200 V	表面贴装：	YES
端子形式：	UNSPECIFIED	端子位置：	UNSPECIFIED
触发设备类型：	SCR

P0367WC12F 数据手册

Date:- 02 August 2012

Data Sheet Issue:- K1

Fast Turn-off Thyristor

Type P0367WC12#

Absolute Maximum Ratings

MAXIMUM

LIMITS

1200

VOLTAGE RATINGS

UNITS

V_DRM

V_DSM

V_RRM

V_RSM

Repetitive peak off-state voltage, (note 1)

Non-repetitive peak off-state voltage, (note 1)

1200

1300

Repetitive peak reverse voltage, (note 1)

Non-repetitive peak reverse voltage, (note 1)

MAXIMUM

LIMITS

367

OTHER RATINGS

UNITS

I_T(AV)

I_T(RMS)

I_T(d.c.)

I_TSM

I_TSM2

I²t

Mean on-state current, T_sink=55°C, (note 2)

Mean on-state current. T_sink=85°C, (note 2)

Nominal RMS on-state current, T_sink=25°C, (note 2)

D.C. on-state current, T_sink=25°C, (note 4)

Peak non-repetitive surge t_p=10ms, V_RM=0.6V_RRM, (note 5)

Peak non-repetitive surge t_p=10ms, V_RM≤10V, (note 5)

I²t capacity for fusing t_p=10ms, V_RM=0.6V_RRM, (note 5)

I²t capacity for fusing t_p=10ms, V_RM≤10V, (note 5)

Maximum rate of rise of on-state current (repetitive), (Note 6)

Maximum rate of rise of on-state current (non-repetitive), (Note 6)

Peak forward gate voltage

140

740

610

3600

3960

64.8×10³

78.4×10³

500

A²s

A/µs

I²t

(di/dt)_cr

1000

V_FGM

I_FGM

V_RGM

P_G(AV)

P_GM

V_GD

Peak forward gate current

Peak reverse gate voltage

Mean forward gate power

1.5

Peak forward gate power (100µs pulse width)

Non-trigger gate voltage, (Note 7)

0.25

T_HS

Operating temperature range

-40 to +125

-40 to +150

°C

T_stg

Storage temperature range

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T_jbelow 25°C.

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T_jinitial.

6) V_D=80% V_DRM, I_FG=1A, t_r≤1µs, T_case=125°C.

7) Rated V_DRM

Data Sheet. Type P0367WC12# Issue K1

Page 1 of 12

August 2012

12 3 4 5 6 7...12

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