Datasheet > P0366WC08B

P0366WC08B

更新时间： 2024-01-10 15:35:37

品牌	Logo	应用领域
力特 - LITTELFUSE		栅栅极
页数	文件大小	规格书
12页	1591K
描述
Silicon Controlled Rectifier, 590000mA I(T), 800V V(DRM),

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技术参数
数据手册

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P0366WC08B 技术参数

是否Rohs认证：	符合	生命周期：	Not Recommended
Reach Compliance Code：	compliant	风险等级：	5.32
标称电路换相断开时间：	12 µs	关态电压最小值的临界上升速率：	200 V/us
最大直流栅极触发电流：	200 mA	最大直流栅极触发电压：	3 V
最大维持电流：	600 mA	最大漏电流：	30 mA
通态非重复峰值电流：	5170 A	最大通态电流：	590000 A
最高工作温度：	125 °C	最低工作温度：	-40 °C
断态重复峰值电压：	800 V	子类别：	Silicon Controlled Rectifiers
触发设备类型：	SCR

P0366WC08B 数据手册

Date:- 02 August 2012

Data Sheet Issue:- K1

Fast Turn-off Thyristor

Types P0366WC04# & P0366WC08#

Absolute Maximum Ratings

MAXIMUM

LIMITS

VOLTAGE RATINGS

UNITS

V_DRM

V_DSM

V_RRM

V_RSM

Repetitive peak off-state voltage, (note 1)

Non-repetitive peak off-state voltage, (note 1)

Repetitive peak reverse voltage, (note 1)

Non-repetitive peak reverse voltage, (note 1)

400-800

500-900

MAXIMUM

LIMITS

366

OTHER RATINGS

UNITS

I_T(AV)

I_T(RMS)

I_T(d.c.)

I_TSM

I_TSM2

I²t

Mean on-state current, T_sink=55°C, (note 2)

Mean on-state current. T_sink=85°C, (note 2)

Nominal RMS on-state current, T_sink=25°C, (note 2)

D.C. on-state current, T_sink=25°C, (note 4)

Peak non-repetitive surge t_p=10ms, V_RM=0.6V_RRM, (note 5)

Peak non-repetitive surge t_p=10ms, V_RM≤10V, (note 5)

I²t capacity for fusing t_p=10ms, V_RM=0.6V_RRM, (note 5)

I²t capacity for fusing t_p=10ms, V_RM≤10V, (note 5)

Maximum rate of rise of on-state current (repetitive), (Note 6)

Maximum rate of rise of on-state current (non-repetitive), (Note 6)

Peak forward gate voltage

130

756

590

4700

5170

110×10³

134×10³

500

A²s

A/µs

I²t

(di/dt)_cr

1000

V_FGM

I_FGM

V_RGM

P_G(AV)

P_GM

V_GD

Peak forward gate current

Peak reverse gate voltage

Mean forward gate power

1.5

Peak forward gate power (100µs pulse width)

Non-trigger gate voltage, (Note 7)

0.25

T_HS

Operating temperature range

-40 to +125

-40 to +150

°C

T_stg

Storage temperature range

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T_jbelow 25°C.

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T_jinitial.

6) V_D=80% V_DRM, I_FG=1A, t_r≤1µs, T_case=125°C.

7) Rated V_DRM

Data Sheet. Types P0366WC04#-08# Issue K1

Page 1 of 12

August 2012

12 3 4 5 6 7...12

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