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P0366WC08A PDF预览

P0366WC08A

更新时间: 2024-02-28 01:00:50
品牌 Logo 应用领域
力特 - LITTELFUSE 栅极
页数 文件大小 规格书
12页 1591K
描述
Silicon Controlled Rectifier, 590000mA I(T), 800V V(DRM),

P0366WC08A 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.19标称电路换相断开时间:10 µs
关态电压最小值的临界上升速率:200 V/us最大直流栅极触发电流:200 mA
最大直流栅极触发电压:3 V最大维持电流:600 mA
最大漏电流:30 mA通态非重复峰值电流:5170 A
最大通态电流:590000 A最高工作温度:125 °C
最低工作温度:-40 °C断态重复峰值电压:800 V
子类别:Silicon Controlled Rectifiers触发设备类型:SCR
Base Number Matches:1

P0366WC08A 数据手册

 浏览型号P0366WC08A的Datasheet PDF文件第4页浏览型号P0366WC08A的Datasheet PDF文件第5页浏览型号P0366WC08A的Datasheet PDF文件第6页浏览型号P0366WC08A的Datasheet PDF文件第8页浏览型号P0366WC08A的Datasheet PDF文件第9页浏览型号P0366WC08A的Datasheet PDF文件第10页 
Fast turn-off thyristor types P0366WC04# & P0366WC08#  
Figure 3 - Gate characteristics at 25°C junction temperature  
Figure 4 - Gate trigger characteristic  
Trigger point of all thyristors lie within the areas shown.  
Gate drive load line must lie outside appropriate IG/VG rectangle  
Data Sheet. Types P0366WC04#-08# Issue K1  
Page 7 of 12  
August 2012  

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