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ON2173Q

更新时间： 2024-11-07 19:52:35
品牌 Logo 应用领域
松下 - PANASONIC 传感器换能器
页数 文件大小 规格书
3页 89K
描述
Diffuse Photoelectric Sensor, 5mm Min, 5mm Max, 0.10-0.50mA, Rectangular, Through Hole Mount, PRSTR104-003, 4 PIN

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中文翻译

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ON2173Q 技术参数

生命周期：ObsoleteReach Compliance Code：unknown
风险等级：5.84其他特性：HIGH SENSITIVITY, 0.30V VCE
主体宽度：9.5 mm主体高度：6.5 mm
主体长度或直径：19 mm最大测量范围（毫米）：5 mm
最小测量范围（毫米）：5 mm安装特点：THROUGH HOLE MOUNT
最大工作电流：50 mA输出范围：0.10-0.50mA
输出类型：ANALOG CURRENT封装形状/形式：RECTANGULAR
响应时间：6 µs传感器/换能器类型：LINEAR POSITION SENSOR,PHOTOELECTRIC,DIFFUSE
最大供电电压：1.5 V最小供电电压：1.2 V
表面贴装：NO端接类型：SOLDER
Base Number Matches：1

ON2173Q 数据手册

 浏览型号ON2173Q的Datasheet PDF文件第2页浏览型号ON2173Q的Datasheet PDF文件第3页 
Reflective Photosensors (Photo Reflectors)  
CNB1009 (ON2173)  
Reflective photosensor  
Non-contact point SW, object sensing  
Unit: mm  
12.±±±.3  
(4.±)  
■ Overview  
2-φ2.3±±.2  
CNB1009 is a photosensor detecting the change of reflective light  
in which a high efficiency GaAs infrared light emitting diode is used  
as the light emitting element, and a high sensitivity Si phototransistor  
is used as the light detecting element. The two elements are located  
parallel in the same direction and objects are detected when passing  
in front of the device.  
(1.±)  
1.±  
1.±  
19.±±±.3  
2-9.5±±.2  
φ2.2±±.2  
■ Features  
• Fast response: tr , tf = 6 µs (typ.) • Small size, light weight  
(15.5)  
■ Applications  
• Detection of paper, film and cloth • Optical mark reading  
1
4
• Detection of coin and bill  
• Detection of position and edge  
1: Anode  
2: Cathode  
3: Collector  
4: Emitter  
• Start, end mark detection of magnetic tape  
2
3
■ Absolute Maximum Ratings Ta = 25°C  
PRSTR104-003 Package  
(Note) ( ) Dimension is reference  
Parameter  
Input (Light Reverse voltage  
emitting diode) Forward current  
Power dissipation *  
Symbol Rating  
Unit  
V
VR  
IF  
3
50  
75  
20  
mA  
mW  
V
1
PD  
Output (Photo Collector-emitter voltage VCEO  
transistor)  
(Base open)  
Emitter-collector voltage VECO  
(Base open)  
5
V
Collector current  
Collector power dissipation *  
IC  
30  
100  
mA  
mW  
°C  
Note) 1: Input power derating ratio is  
*
2
PC  
1.0 mW/°C at Ta ≥ 25°C.  
Temperature Operating ambient temperature Topr  
Storage temperature  
−25 to +85  
2: Output power derating ratio is  
*
Tstg −30 to +100  
°C  
1.33 mW/°C at Ta ≥ 25°C.  
■ Electrical-Optical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
1.5  
10  
Unit  
V
Input  
Forward voltage  
VF  
IR  
IF = 50 mA  
VR = 3 V  
1.2  
characteristics Reverse current  
µA  
pF  
Terminal capacitance  
Ct  
VR = 0 V, f = 1 MHz  
VCE = 10 V  
50  
Output  
Collector-emitter cutoff current ICEO  
200  
nA  
characteristics (Base open)  
capacitance CC  
VCE = 10 V, f = 1 MHz  
5
pF  
µA  
V
Collector-emitter  
1, 2  
Transfer  
Collector current *  
IC  
VCC = 10 V, IF = 20 mA, RL = 100 Ω, d = 5 mm  
100  
500  
characteristics Collector-emitter saturation voltage VCE(sat) IF = 50 mA, IC = 0.1 mA  
0.3  
Rise time  
Fall time  
tr  
tf  
VCC = 10 V, IC = 1 mA, RL = 100 Ω  
6.0  
6.0  
µs  
µs  
Note) 1. Input and output are handled electrically.  
2. This product is not designed to withstand radiation  
VCC  
IF  
IC  
d = 5 mm  
3. 1: Output current measurement circuit  
*
RL  
(Ambient light is shut off completely)  
Standard white paper  
(Reflective ratio 90%)  
2:Rank classification  
*
Rank  
Q
R
S
No-rank  
Note) The part number in the parenthesis  
shows conventional part number.  
IC (µA)  
100 to 500 350 to 750  
600 ≤  
100 ≤  
Publication date: April 2004  
SHG00045BED  
1
123

中文翻译

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