Datasheet > ON2179R

ON2179R

更新时间： 2024-01-25 03:07:10

品牌	Logo	应用领域
松下 - PANASONIC		传感器换能器
页数	文件大小	规格书
3页	86K
描述
Diffuse Photoelectric Sensor, 5mm Min, 5mm Max, 0.30-0.90mA, Rectangular, Through Hole Mount, PRSTR104-004, 4 PIN

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ON2179R 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.83	其他特性：	HIGH SENSITIVITY, 0.50V VCE
主体宽度：	5.2 mm	主体高度：	8 mm
主体长度或直径：	13 mm	最大测量范围（毫米）：	5 mm
最小测量范围（毫米）：	5 mm	安装特点：	THROUGH HOLE MOUNT
最大工作电流：	50 mA	输出范围：	0.30-0.90mA
输出类型：	ANALOG CURRENT	封装形状/形式：	RECTANGULAR
响应时间：	20 µs	传感器/换能器类型：	LINEAR POSITION SENSOR,PHOTOELECTRIC,DIFFUSE
最大供电电压：	1.5 V	最小供电电压：	1.3 V
表面贴装：	NO	端接类型：	SOLDER
Base Number Matches：	1

ON2179R 数据手册

Reflective Photosensors (Photo Reflectors)

CNZ2179 (ON2179)

Reflective photosensor

Unit: mm

Non-contact point SW, object sensing

■ Overview

13.0

CNZ2179 is a reflective photosensor with a long focal distance,

in which a high efficiency GaAs infrared light emitting diode is

used as a light emitting element and a high sensitivity Si

phototransistor is used as the light detecting element.

0.85 max.

(2-0.5)

(2.54)

■ Features

(7.6)

• Long focal distance: 6 mm (typ.)

• Visible light cutoff resin is used

1: Anode

2: Cathode

3: Collector

4: Emitter

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Input (Light Reverse voltage

emitting diode) Forward current

Power dissipation ^*

Symbol Rating

Unit

PRSTR104-004 Package

V_R

I_F

(Note) 1. Tolerance unless otherwise specified is 0.3

2. ( ) Dimension is reference

P_D

Output (Photo Collector-emitter voltage V_CEO

transistor)

(Base open)

Emitter-collector voltage V_ECO

(Base open)

Note) 1: Input power derating ratio is

Collector current

I_C

°C

1.25 mW/°C at T_a≥ 25°C.

Collector power dissipation ^*

P_C

100

2: Output power derating ratio is

Temperature Operating ambient temperature T_opr

Storage temperature T_stg

−25 to +80

−30 to +85

1.67 mW/°C at T_a≥ 25°C.

°C

■ Electrical-Optical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_F

Conditions

Min

Typ

Max

Unit

Input

Forward voltage

I_F= 50 mA

1.3

1.5

characteristics Reverse current

I_R

V_R= 3 V

µA

Output

V_CE= 10 V

200

Collector-emitter cutoff current I_CEO

(Base open)

characteristics

1, 2

Transfer

Collector current ^*

I_C

V_CE= 5 V, I_F= 20 mA, d = 5 mm

180

1 500

0.5

µA

characteristics Collector-emitter saturation voltage V_CE(sat)I_F= 50 mA, I_C= 0.1 mA

Rise time

Fall time

t_r

t_f

V_CC= 10 V, I_C= 0.1 mA, R_L= 100 Ω

µs

Note) 1. Input and output are handled electrically.

2. This product is not designed to withstand radiation

3. 1: Output current measurement circuit

V_CC

I_F

I_C

(Ambient light is shut off completely)

2: Rank classification

d = 5 mm

Rank

R_L

White paper

(Reflective ratio 90%)

I_C(µA)

180 to 550 300 to 900 500 to 1500

Note) The part number in the parenthesis shows conventional part number.

Publication date: April 2004

SHG00054BED

12 3

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