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ON2270Q PDF预览

ON2270Q

更新时间: 2024-01-30 18:55:41
品牌 Logo 应用领域
松下 - PANASONIC 传感器换能器
页数 文件大小 规格书
3页 89K
描述
Diffuse Photoelectric Sensor, 1mm Min, 1mm Max, 0.46-12mA, Rectangular, Through Hole Mount, 2.70 X 3.40 MM, ULTRAMINIATURE, PLASTIC, PRSMW104-001, 4 PIN

ON2270Q 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.84其他特性:HIGH SENSITIVITY, 1.50V VCE, 2UA DARK CURRENT
主体宽度:2.7 mm主体高度:1.5 mm
主体长度或直径:3.4 mm最大测量范围(毫米):1 mm
最小测量范围(毫米):1 mm安装特点:THROUGH HOLE MOUNT
最大工作电流:50 mA输出范围:0.46-12mA
输出类型:ANALOG CURRENT封装形状/形式:RECTANGULAR
响应时间:150 µs传感器/换能器类型:LINEAR POSITION SENSOR,PHOTOELECTRIC,DIFFUSE
最大供电电压:1.5 V最小供电电压:1.3 V
表面贴装:NO端接类型:SOLDER
Base Number Matches:1

ON2270Q 数据手册

 浏览型号ON2270Q的Datasheet PDF文件第2页浏览型号ON2270Q的Datasheet PDF文件第3页 
Reflective Photosensors (Photo Reflectors)  
CNB2301 (ON2270)  
Reflective photosensor  
Non-contact point SW, object sensing  
Unit: mm  
Overview  
Mark for indicating  
Anode side  
C0.5  
CNB2301 is a small, thin reflective photosensor consisting of a  
high efficiency GaAs infrared light emitting diode which is integrated  
with a high sensitivity Darlington phototransistor used as the photo  
detector in a single resin package.  
±
3
Chip  
center  
Features  
Ultraminiature: 2.7 mm × 3.4 mm  
Visible light cutoff resin is used  
High current-transfer ratio  
4-0.7  
4-0.5  
±0.±  
Applications  
Detection of paper, film and cloth Detection of position and edge  
0.5  
2
4
±.8  
0.±5  
Liquid level sensor  
Start, end mark detection of magnetic tape  
Detection of rotary positioning  
3.4±0.3  
1: Anode  
2: Cathode  
3: Emitter  
4: Collector  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Input (Light Reverse voltage  
emitting diode) Forward current  
Power dissipation  
Symbol Rating  
Unit  
V
PRSMW104-001 Package  
VR  
IF  
3
50  
75  
20  
mA  
mW  
V
PD  
Output (Photo Collector-emitter voltage VCEO  
transistor)  
(Base open)  
Emitter-collector voltage VECO  
(Base open)  
5
V
Collector current  
IC  
30  
75  
mA  
mW  
°C  
Collector power dissipation  
PC  
Temperature Operating ambient temperature Topr  
Storage temperature  
25 to +85  
Tstg 30 to +100  
°C  
Electrical-Optical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
V
Input  
Forward voltage  
VF  
IR  
IF = 50 mA  
VR = 3 V  
1.3  
1.5  
characteristics Reverse current  
0.01 10.00  
µA  
pF  
Terminal capacitance  
Ct  
VR = 0 V, f = 1 MHz  
VCE = 10 V  
30  
Output  
Collector-emitter cutoff current ICEO  
1.0  
µA  
characteristics (Base open)  
1, 2  
Transfer  
Collector current *  
IC  
ID  
VCC = 5 V, IF = 2 mA, RL = 100 , d = 1 mm  
VCC = 5 V, IF = 2 mA, RL = 100 Ω  
0.46  
12.00  
mA  
µA  
V
characteristics Dark current  
2.0  
Collector-emitter saturation voltage VCE(sat) IF = 5 mA, IC = 0.5 mA  
1.5  
150  
Rise time  
Fall time  
tr  
tf  
VCC = 10 V, IC = 1 mA, RL = 100 Ω  
µs  
150  
µs  
Note) 1. Input and output are handled electrically.  
2. This product is not designed to withstand radiation  
3. 1: Output current measurement method  
*
2: Rank classification  
*
Evaporated Al  
Glass plate (d = 1 mm)  
Rank  
IC (mA)  
Color  
Q
R
S
0.46 to 1.75 1.30 to 4.95 3.15 to 12.00  
Pink Black Blue  
RL  
IC  
IF  
VCC  
Note) The part number in the parenthesis shows conventional part number.  
Publication date: April 2004  
SHG00051BED  
1

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