Datasheet > ON2280Q

ON2280Q

更新时间： 2024-09-23 19:59:55

品牌	Logo	应用领域
松下 - PANASONIC		/
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描述
Optoelectronic Device

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中文翻译

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技术参数
数据手册

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ON2280Q 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.84	Base Number Matches：	1

ON2280Q 数据手册

Reflective Photosensors (Photo Reflectors)

ON2280

Reflective Photosensor

Unit : mm

Outline

Mark for indicating

emitter side

C0.5

ONN2280 is a small, thin reflective photosensor consisting of a

high efficiency GaAs infrared light emitting diode which is integrated

with a high sensitivity Darlington phototransistor is used as the

photodetector in a single resin package.

Chip

center

Features

Ultraminiature : 2.7 × 3.4 mm

4-0.7

4-0.5

Visible light cutoff resin is used

High current-transfer ratio

±0.1

0.5

1.8

0.15

Application

3.4±0.3

Detection of paper, film and cloth

Detection of position and edge

Liquid level sensor

Detection of rotary positioning

Start, end mark detection of magnetic tape

Pin connection

Absolute Maximum Ratings (Ta = 25˚C)

Parameter

Symbol Ratings Unit

Reverse voltage (DC)

Forward current (DC)

Power dissipation

Collector current

V_R

Input (Light

I_F

emitting diode)

P_D

I_C

Reflective

Photo

sensors

Collector to emitter voltage V_CEO

Emitter to collector voltage V_ECO

Output (Photo

transistor)

^*1Input power derating ratio is

Collector power dissipation P_C

˚C

1.0 mW/˚C at Ta ≥ 25˚C.

^*2Output power derating ratio is

Operating ambient temperature

T_opr–25 to +85

Temperature

Storage temperature

T_stg–30 to +100 ˚C

1.0 mW/˚C at Ta ≥ 25˚C.

Electrical Characteristics (Ta = 25˚C)

Parameter

Symbol

V_F

Conditions

min

typ

1.3

max

1.5

Unit

Forward voltage (DC)

Reverse current (DC)

Capacitance between terminals

I_F= 50mA

V_R= 3V

Input

I_R

0.01

µA

characteristics

C_t

V_R= 0V, f = 1MHz

Output characteristics Collector cutoff current

I_CEOV_CE= 10V

1.0

12.0

2.0

µA

*1, *2

Collector current

I_C

V_CC= 5V, I_F= 2mA, R_L= 100Ω, d = 1mm

0.46

Leakage current

I_D

V_CC= 5V, I_F= 2mA, R_L= 100Ω

Transfer

characteristics

Collector to emitter saturation voltage V_CE(sat)I_F= 5mA, I_C= 0.5mA

1.5

Response time

^*1I_Cclassifications

t_r^*3, t_f^*4V_CC= 10V, I_C= 1mA, R_L= 100Ω

150

µs

Output current Measurement Method

Evaporated Al

Glass plate

(t = 1mm)

Class

I_C(mA)

0.46 to 1.75

1.3 to 4.95

3.15 to 12.0

Time required for the collector current to increase from 10% to 90% of its final value.

R_L

90%

10%

I_F

I_C

V_CC

Time required for the collector current to decrease from

90% to 10% of its initial value.

t_r

t_f

12 3

中文翻译

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