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ON2180S

更新时间： 2024-02-28 20:48:04
品牌 Logo 应用领域
松下 - PANASONIC 传感器换能器
页数 文件大小 规格书
3页 181K
描述
Diffuse Photoelectric Sensor, 1mm Min, 1mm Max, 0.36-0.88mA, 1-Channel, Rectangular, Through Hole Mount

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ON2180S 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
Reach Compliance Code：unknown风险等级：5.92
其他特性：HIGH SENSITIVITY, 0.40V VCE主体宽度：2.7 mm
主体高度：1.5 mm主体长度或直径：3.4 mm
JESD-609代码：e0最大测量范围（毫米）：1 mm
最小测量范围（毫米）：1 mm安装特点：THROUGH HOLE MOUNT
信道数量：1最大工作电流：50 mA
最高工作温度：85 °C最低工作温度：-25 °C
输出电路类型：Transistor最大输出电流：0.88 mA
输出范围：0.36-0.88mA输出类型：ANALOG CURRENT
最大输出电压：30 V封装形状/形式：RECTANGULAR
响应时间：20 µs传感器/换能器类型：LINEAR POSITION SENSOR,PHOTOELECTRIC,DIFFUSE
子类别：Position, Linear, Photoelectric Sensors最大供电电压：1.5 V
最小供电电压：1.3 V表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端接类型：SOLDER
VCEsat-Max：0.4 VBase Number Matches：1

ON2180S 数据手册

 浏览型号ON2180S的Datasheet PDF文件第2页浏览型号ON2180S的Datasheet PDF文件第3页 
Reflective Photosensors (Photo Reflectors)  
CNB1303 (ON2180)  
Reflective Photosensor  
Unit : mm  
Overview  
Mark for indicating  
emitter side  
C0.5  
CNB1303 is a small, thin reflective photosensor consisting of a  
high efficiency GaAs infrared light emitting diode which is integrated  
with a high sensitivity Si phototransistor in a single resin package.  
1
3
Chip  
center  
Features  
Ultraminiature, thin type : 2.7 × 3.4 mm (height : 1.5 mm)  
Visible light cutoff resin is used  
Fast response : tr, tf = 20µs (typ.)  
Easy interface for control circuit  
45  
±0.1  
0.5  
2
4
1.8  
Applications  
Control of motor and other rotary units  
3.4
Detection of position and edge  
Detection of paper, film and cloth  
Start, end mark detection of magnetic tape  
3
4
1
2
Pin connection  
Absolute Maximum Ratings (Ta = 25˚)  
Parameter  
ol Rtings Uni
Reverse voltage (DC)  
Forward current (D)  
Power dissipatio
Collector rrent  
VR  
IF  
3
V
mA  
W  
mA  
V
Input (Light  
50  
75  
20  
emitting diode)  
*1  
PD  
IC  
Collector emitr voltage VCE
Output (Photo  
transistor)  
Emitteto collctor voltage VECO  
V
*1 Input power derating ratio is  
*2  
Collwer dissipatioPC  
50  
mW  
˚C  
1.0 mW/˚C at Ta ≥ 25˚C.  
*2 Output power derating ratio is  
Opeambient temperature  
Topr –25 to +85  
Temperatue  
0.67 mW/˚C at Ta ≥ 25˚C.  
torage temperture  
Tstg –30 to +100 ˚C  
Electricl Characterstics (Ta = 25˚C)  
P
Symbol  
VF  
Conditions  
min  
typ  
1.3  
max  
1.5  
Unit  
V
FoDC)  
ReversDC)  
Capacitance ween terminals  
IF = 50mA  
VR = 3V  
Input  
IR  
0.01  
30  
10  
µA  
pF  
characteristics  
Ct  
VR = 0V, f = 1MHz  
Output characteristics Collector cutoff current  
ICEO VCE = 10V  
200  
880  
200  
nA  
µA  
nA  
µs  
*1, *2  
Collector current  
IC  
VCC = 5V, IF = 10mA, RL = 100Ω, d = 1mm  
90  
Leakage current  
Response time  
ID  
VCC = 5V, IF = 10mA, RL = 100Ω  
Transfer  
tr*3 , tf*4 VCC = 5V, IC = 0.1mA, RL = 100Ω  
20  
characteristics  
Collector to emitter saturation voltage VCE(sat) IF = 20mA, IC = 0.1mA  
0.4  
V
*1 IC classifications  
Class  
*2 Output current measurement method  
Evaporated Al  
Q
R
S
Glass plate  
(t = 1mm)  
IC (µA)  
90 to 220  
180 to 440  
360 to 880  
*3 Time required for the output current to increase from 10% to 90% of its final value  
*4 Time required for the output current to decrease from 90% to 10% of its initial value  
RL  
IC  
IF  
VCC  
Note) The part number in the parenthesis shows conventional part number.  
1
123

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