Datasheet > NX7561JB-BC-AZ

NX7561JB-BC-AZ

更新时间： 2024-11-12 22:09:55

品牌	Logo	应用领域
CEL		二极管激光二极管脉冲
页数	文件大小	规格书
4页	181K
描述
NECs 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (135 mW MIN)

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NX7561JB-BC-AZ 数据手册

NEC's 1550 nm InGaAsP MQW FP

PULSED LASER DIODE IN DIP PACKAGE

FOR OTDR APPLICATION (135 mW MIN)

NX7561JB-BC

FEATURES

DESCRIPTION

NEC's NX7561JB-BC is a 1550 nm developed strained Mul-

tipleQuantumWell(st-MQW)structurepulsedlaserdiodeDIP

module with single mode fiber and internal thermoelectric

cooler. It is designed for light sources of optical measurement

equipment (OTDR).

• HIGH OUTPUT POWER:

Pf = 135 mW MIN at IFP = 1000 mA,

Pulse width (PW) = 10ms, Duty = 1%

• LONG WAVELENGTH:

λC = 1550 nm

• INTERNAL THERMOELECTRIC COOLER

• HERMETICALLY SEALED 14 PIN DUAL-IN-LINE PACKAGE

• SINGLE MODE FIBER PIGTAIL

ELECTRO-OPTICAL CHARACTERISTICS (TLD = 25°C, TC = -20 to +65°C, unless otherwise specified)

PART NUMBER

NX7561JB-BC

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

2.5

MAX

4.0

VFP

ITH

Forward Voltage, CW, IF = 30 mA

Threshold Current, CW

Optical Output Power from Fiber IFP = 1000 mA¹

IFP = 600 mA¹

135

IFP = 400 mA¹

Center Wavelength, RMS, IFP = 400, 600, 1000 mA¹

λC

1530

1550

6.0

1570

10.0

Spectral Width, RMS, IFP = 400, 600, 1000 mA¹

Rise Time, 10-90%

Fall Time, 90-10%

1.0

1.4

2.0

Note:

1. PW = 10 µs, Duty = 1%

ELECTRO-OPTICAL CHARACTERISTICS

APPLICABLE TO THERMISTOR AND TEC: (TLD = 25°C, TC = -20 to +65°C, unless otherwise specified)

PART NUMBER

NX7561JB-BC

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

9.5

TYP

10.0

3450

0.6

MAX

10.5

3550

0.8

R¹

Thermistor Resistance, TLD = 25°C

kΩ

B Constant

3350

Cooler Current, ∆T = 40 K

Cooler Voltage, ∆T = 40 K

Cooling Capacity, IC = 0.8 A

∆T¹

1.1

1.5

Note:

1. ∆T = | TC - TLD |.

California Eastern Laboratories

12 3 4

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