Datasheet > NX7563JB-BC

NX7563JB-BC

更新时间： 2024-09-25 02:59:31

品牌	Logo	应用领域
CEL		二极管激光二极管脉冲
页数	文件大小	规格书
6页	979K
描述
InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION

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NX7563JB-BC 数据手册

DATA SHEET

LASER DIODE

NX7563JB-BC

InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE

1 550 nm OTDR APPLICATION

DESCRIPTION

The NX7563JB-BC is a 1 550 nm Multiple Quantum Well (MQW) structure pulsed laser diode DIP module with

single mode fiber and internal thermoelectric cooler. It is designed for light sources of optical measurement equipment

(OTDR).

FEATURES

•

High output power

Long wavelength

Pf = 135 mW MIN. @ IFP = 1 000 mA, PW = 10 µs, Duty = 1%

λC = 1 550 nm

Internal thermoelectric cooler, thermistor

Hermetically sealed 14-pin Dual-In-Line Package

Single mode fiber pigtail

PACKAGE DIMENSIONS (UNIT: mm)

5.1

BOTTOM VIEW

4.0

20.8

3.2

21.3

3.0

1.0

#14

–

Thermistor

Case

Optical Fiber

SM-9/125,

PIN CONNECTIONS

Length: 1 m TYP.

Function

Pin No.

Cooler Anode

Laser Anode,

Case Ground

Laser Cathode

Laser Anode,

Case Ground

Thermistor

2.54

0.45

Cooler Cathode

The information in this document is subject to change without notice. Before using this document, please confirm

that this is the latest version.

Document No. GBB-SA-1699

Date Published December 2005 CP(K)

12 3 4 5 6

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与NX7563JB-BC相关器件

型号	品牌	获取价格	描述	数据表
NX7563JB-BC-AZ	CEL	获取价格	InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION
NX7637BF-AA	RENESAS	获取价格	1 625 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
NX7639BB-AA	RENESAS	获取价格	1 625 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
NX7660JC	NEC	获取价格	InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION
NX7660JC-BA	NEC	获取价格	InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION
NX7660JC-CA	NEC	获取价格	InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION
NX7661JB	RENESAS	获取价格	LASER DIODE,1.625UM PEAK WAVELENGTH,MODULE C
NX7661JB-BA	RENESAS	获取价格	LASER DIODE,1.625UM PEAK WAVELENGTH,MODULE C
NX7661JB-BC	CEL	获取价格	NECs 1625 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (120 mW
NX7661JB-BC-AZ	CEL	获取价格	NECs 1625 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (120 mW