型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NX7660JC-BA | NEC |
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InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION | |
NX7660JC-CA | NEC |
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InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION | |
NX7661JB | RENESAS |
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LASER DIODE,1.625UM PEAK WAVELENGTH,MODULE C | |
NX7661JB-BA | RENESAS |
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LASER DIODE,1.625UM PEAK WAVELENGTH,MODULE C | |
NX7661JB-BC | CEL |
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NECs 1625 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (120 mW | |
NX7661JB-BC-AZ | CEL |
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NECs 1625 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (120 mW | |
NX7663JB-BC | CEL |
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InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION | |
NX7663JB-BC | RENESAS |
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LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION | |
NX7663JB-BC-AZ | CEL |
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InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION | |
NX76SA | DIODES |
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7.0mmx5.0mm CML 2-frequency Programmable XO |