Datasheet > NX6020CAKS

NX6020CAKS

更新时间： 2024-09-16 11:15:55

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
22页	308K
描述
60 V / 50 V, 170 mA / 160 mA N/P-channel Trench MOSFETProduction

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中文翻译

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技术参数
数据手册

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NX6020CAKS 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.73	JESD-609代码：	e3
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
端子面层：	Tin (Sn)	处于峰值回流温度下的最长时间：	30
Base Number Matches：	1

NX6020CAKS 数据手册

NX6020CAKS

60 V / 50 V, 170 mA / 160 mA N/P-channel Trench MOSFET

18 January 2018

Product data sheet

1. General description

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small

SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

2. Features and benefits

•

Trench MOSFET technology

•

Very fast switching

ElectroStatic Discharge (ESD) protection

3. Applications

•

Relay driver

High-speed line driver

Level shifter

Power supply converter

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

TR1 (N-channel)

V_DS

I_D

drain-source voltage

drain current

T_j= 25 °C

V_GS= 10 V; T_amb= 25 °C

[1]

170

TR1 (N-channel), Static characteristics

R_DSon

drain-source on-state

resistance

V_GS= 10 V; I_D= 100 mA; T_j= 25 °C

4.5

TR2 (P-channel)

V_DS

I_D

drain-source voltage

drain current

T_j= 25 °C

-50

V_GS= -10 V; T_amb= 25 °C

[1]

-160

TR2 (P-channel), Static characteristics

R_DSon

drain-source on-state

resistance

V_GS= -10 V; I_D= -100 mA; T_j= 25 °C

4.5

7.5

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm².

12 3 4 5 6 7...22

中文翻译

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