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NX6008NBKS PDF预览

NX6008NBKS

更新时间: 2024-11-06 11:14:31
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
14页 283K
描述
60 V, dual N-channel Trench MOSFETProduction

NX6008NBKS 数据手册

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NX6008NBKS  
60 V, dual N-channel Trench MOSFET  
19 August 2021  
Product data sheet  
1. General description  
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88)  
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.  
2. Features and benefits  
Low threshold voltage  
Very fast switching  
Trench MOSFET technology  
ElectroStatic Discharge (ESD) protection > 2 kV HBM  
3. Applications  
Relay driver  
High-speed line driver  
Low-side load switch  
Switching circuits  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
VDS  
Parameter  
Conditions  
Min  
Typ  
Max  
60  
Unit  
V
drain-source voltage  
gate-source voltage  
drain current  
Tj = 25 °C  
-
-
-
-
VGS  
-8  
-
8
V
ID  
VGS = 4.5 V; Tamb = 25 °C  
[1]  
220  
mA  
Static characteristics  
RDSon drain-source on-state  
resistance  
VGS = 4.5 V; ID = 300 mA; Tj = 25 °C  
-
2
2.7  
Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.  
 
 
 
 
 

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