Datasheet > NVMJD7D4N04CLTWG

NVMJD7D4N04CLTWG

更新时间： 2023-09-03 20:32:36

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	248K
描述
Dual N−Channel Power MOSFET 40V, 52A, 7.4mΩ

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NVMJD7D4N04CLTWG 数据手册

NVMJD7D4N04CL

TYPICAL CHARACTERISTICS

= 10 to 5 V

= 5 V

4.0 V

3.6 V

4.5 V

3.2 V

2.8 V

T = 25°C

T = 125°C

T = −55°C

0.5

1.0

1.5

2.0

2.5

3.0

, DRAIN−TO−SOURCE VOLTAGE (V)

, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

= 13 A

T = 25°C

= 4.5 V

= 10 V

, GATE−TO−SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

Figure 3. On−Resistance vs. Gate−to−Source

Figure 4. On−Resistance vs. Drain Current and

Voltage

Gate Voltage

2.0

1.9

1.8

1.7

1.6

1.5

1.4

1.3

1.2

1.1

1.0

0.9

0.8

100K

10K

T = 175°C

= 13 A

= 10 V

T = 150°C

T = 125°C

100

T = 85°C

T = 25°C

0.7

0.6

0.5

0.1

−50 −25

75 100 125 150 175

T , JUNCTION TEMPERATURE (°C)

, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 5. On−Resistance Variation with

Figure 6. Drain−to−Source Leakage Current

Temperature

vs. Voltage

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1 234 5 6

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