DATA SHEET
www.onsemi.com
MOSFET – Power, Single
N-Channel
40 V, 1.39 mW, 386 A
V
R
MAX
I
MAX
(BR)DSS
DS(ON)
D
40 V
1.39 mW @ 10 V
386 A
D (6,7,8,9,10,TOP)
NVMJST1D3N04C
Features
• Small Footprint (5x7 mm) for Compact Design
G (1)
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
S (2,3,4,5)
• TCPAK57 5x7 Top Cool Package
N−CHANNEL MOSFET
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
V
DSS
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
386
273
375
187
900
A
C
D
TCPAK57
CASE 760AG
q
JC
T
C
(Notes 1, 3)
Steady
State
Power Dissipation
T
C
P
W
D
R
(Note 1)
q
JC
T
C
= 100°C
MARKING DIAGRAM
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Source Current (Body Diode)
I
312
739
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 19 A)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
XXXX
A
Y
= Specific Device Code
= Assembly Location
= Year
THERMAL RESISTANCE MAXIMUM RATINGS
W
= Work Week
ZZ
= Assembly Lot
Parameter
Symbol
Value
0.4
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
Junction−to−Heatsink Top (Note 2)
Junction−to−Drain Lead
R
°C/W
q
JC
R
29.2
1.67
5.4
q
JA
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Y
JH
Y
JL
Y
JL
Junction−to−Source Lead
5.3
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. 2s2p JEDEC51−7 standard PCB mounted to a 25x25x3 (mm) aluminum
heatsink with a 12 w/mK TIM interface.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
September, 2022 − Rev. 3
NVMJST1D3N04C/D