Datasheet > 晶体管 > 小信号场效应晶体管> NVMS5P02R2G

NVMS5P02R2G

更新时间： 2024-02-14 19:48:55

品牌	Logo	应用领域
安森美 - ONSEMI		小信号场效应晶体管
页数	文件大小	规格书
7页	122K
描述
Single P-Channel Enhancement−Mode Power MOSFET -20V, -5.4A, 33mΩ

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数据手册

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NVMS5P02R2G 数据手册

NTMS5P02R2

Power MOSFET

−5.4 Amps, −20 Volts

P−Channel Enhancement−Mode

Single SOIC−8 Package

http://onsemi.com

Features

TYP

I MAX

DSS

DS(ON)

• High Density Power MOSFET with Ultra Low R

DS(on)

Providing Higher Efficiency

−20 V

26 mW @ −4.5 V

−5.4 A

• Miniature SOIC−8 Surface Mount Package − Saves Board Space

• Diode Exhibits High Speed with Soft Recovery

• I

Specified at Elevated Temperature

Single P−Channel

DSS

• Drain−to−Source Avalanche Energy Specified

• Mounting Information for the SOIC−8 Package is Provided

• Pb−Free Package is Available

Applications

• Power Management in Portable and Battery−Powered Products, i.e.:

Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones

MARKING DIAGRAM &

PIN ASSIGNMENT

E5P02x

AYWW G

SOIC−8

CASE 751

STYLE 13

NC S

E5P02 = Specific Device Code

= Blank or S

= Assembly Location

= Year

= Work Week

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

†

Device

Package

Shipping

NTMS5P02R2

SOIC−8

2500/Tape & Reel

NTMS5P02R2G

SOIC−8

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

March, 2006 − Rev. 2

NTMS5P02R2/D

12 3 4 5 6 7

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