Datasheet > NVMYS003N08LHTWG

NVMYS003N08LHTWG

更新时间： 2024-11-21 20:10:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	204K
描述
Power Field-Effect Transistor

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NVMYS003N08LHTWG 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.76	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

NVMYS003N08LHTWG 数据手册

MOSFET - Power, Single

N-Channel

80 V, 3.3 mW, 132 A

NVMYS003N08LH

Features

www.onsemi.com

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

MAX

I MAX

(BR)DSS

DS(ON)

• LFPAK4 Package, Industry Standard

3.3 mW @ 10 V

4.3 mW @ 4.5 V

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

80 V

132 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

D (5)

DSS

Gate−to−Source Voltage

Continuous Drain

Current R

Steady

State

= 25°C

= 100°C

= 25°C

132

G (4)

(Notes 1, 3)

Power Dissipation

137

S (1,2,3)

N−CHANNEL MOSFET

(Note 1)

= 100°C

Continuous Drain

Current R

Steady

State

T = 25°C

T = 100°C

(Notes 1, 2, 3)

MARKING

DIAGRAM

Power Dissipation

T = 25°C

3.8

1.9

900

(Notes 1, 2)

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

003N08

AWLYW

Operating Junction and Storage Temperature

Range

T , T

−55 to

°C

stg

+175

LFPAK4

CASE 760AB

Source Current (Body Diode)

114

Single Pulse Drain−to−Source Avalanche

1211

Energy (I

= 9 A)

L(pk)

003N08LH = Specific Device Code

Lead Temperature for Soldering Purposes

260

°C

= Assembly Location

= Wafer Lot

= Year

(1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

= Work Week

THERMAL RESISTANCE MAXIMUM RATINGS

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

Parameter

Symbol

Value

1.1

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

39.6

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

February, 2020 − Rev. 0

NVMYS003N08LH/D

12 3 4 5 6

中文翻译

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