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NVMYS003N08LHTWG

更新时间: 2024-11-11 20:10:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 204K
描述
Power Field-Effect Transistor

NVMYS003N08LHTWG 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.76峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

NVMYS003N08LHTWG 数据手册

 浏览型号NVMYS003N08LHTWG的Datasheet PDF文件第2页浏览型号NVMYS003N08LHTWG的Datasheet PDF文件第3页浏览型号NVMYS003N08LHTWG的Datasheet PDF文件第4页浏览型号NVMYS003N08LHTWG的Datasheet PDF文件第5页浏览型号NVMYS003N08LHTWG的Datasheet PDF文件第6页 
MOSFET - Power, Single  
N-Channel  
80 V, 3.3 mW, 132 A  
NVMYS003N08LH  
Features  
www.onsemi.com  
Small Footprint (5x6 mm) for Compact Design  
Low R  
to Minimize Conduction Losses  
DS(on)  
Low Q and Capacitance to Minimize Driver Losses  
G
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
LFPAK4 Package, Industry Standard  
3.3 mW @ 10 V  
4.3 mW @ 4.5 V  
AECQ101 Qualified and PPAP Capable  
These Devices are PbFree and are RoHS Compliant  
80 V  
132 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
DraintoSource Voltage  
Symbol  
Value  
80  
Unit  
V
D (5)  
V
DSS  
GatetoSource Voltage  
V
GS  
20  
V
Continuous Drain  
Current R  
Steady  
State  
T
= 25°C  
= 100°C  
= 25°C  
I
132  
93  
A
C
D
q
JC  
G (4)  
T
C
(Notes 1, 3)  
Power Dissipation  
T
C
P
137  
68  
W
A
D
S (1,2,3)  
NCHANNEL MOSFET  
R
(Note 1)  
q
JC  
T
C
= 100°C  
Continuous Drain  
Current R  
Steady  
State  
T = 25°C  
A
I
D
22  
q
JA  
T = 100°C  
A
16  
(Notes 1, 2, 3)  
MARKING  
DIAGRAM  
Power Dissipation  
T = 25°C  
P
3.8  
1.9  
900  
W
A
D
R
(Notes 1, 2)  
q
JA  
T = 100°C  
A
D
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
003N08  
LH  
AWLYW  
Operating Junction and Storage Temperature  
Range  
T , T  
55 to  
°C  
J
stg  
+175  
LFPAK4  
CASE 760AB  
Source Current (Body Diode)  
I
S
114  
A
1
Single Pulse DraintoSource Avalanche  
E
AS  
1211  
mJ  
S
S
S
G
Energy (I  
= 9 A)  
L(pk)  
003N08LH = Specific Device Code  
Lead Temperature for Soldering Purposes  
T
260  
°C  
L
A
WL  
Y
= Assembly Location  
= Wafer Lot  
= Year  
(1/8from case for 10 s)  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
W
= Work Week  
THERMAL RESISTANCE MAXIMUM RATINGS  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
Parameter  
Symbol  
Value  
1.1  
Unit  
JunctiontoCase Steady State  
JunctiontoAmbient Steady State (Note 2)  
R
°C/W  
q
JC  
R
39.6  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
February, 2020 Rev. 0  
NVMYS003N08LH/D  
 

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