Datasheet > NVMJST1D3N04CTXG

NVMJST1D3N04CTXG

更新时间： 2023-09-03 20:30:07

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	314K
描述
Single N-Channel Power MOSFET, 40 V, 1.35 mΩ on Top Cool Package

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NVMJST1D3N04CTXG 数据手册

NVMJST1D3N04C

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)

Parameter

OFF CHARACTERISTICS

Symbol

Test Condition

Min

Typ

Max

Unit

Drain−to−Source Breakdown Voltage

= 0 V, I = 250 mA

(BR)DSS

Drain−to−Source Breakdown Voltage

Temperature Coefficient

9.6

mV/°C

(BR)DSS

Zero Gate Voltage Drain Current

= 0 V,

T = 25°C

DSS

= 40 V

T = 125°C

100

Gate−to−Source Leakage Current

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

Threshold Temperature Coefficient

Drain−to−Source On Resistance

Forward Transconductance

CHARGES AND CAPACITANCES

Input Capacitance

= 0 V, V = 20 V

GSS

= V , I = 170 mA

2.5

3.5

mV/°C

GS(TH)

−8.6

1.2

GS(TH)

= 10 V

I = 50 A

1.39

DS(on)

=15 V, I = 50 A

145

4300

2100

ISS

Output Capacitance

= 0 V, f = 1 MHz, V = 25 V

OSS

RSS

Reverse Transfer Capacitance

Total Gate Charge

= 10 V, V = 20 V; I = 50 A

G(TOT)

Threshold Gate Charge

G(TH)

Gate−to−Source Charge

Gate−to−Drain Charge

= 10 V, V = 20 V; I = 50 A

Plateau Voltage

4.7

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

9.0

d(ON)

Rise Time

= 10 V, V = 20 V,

= 50 A, R = 2.5 W

Turn−Off Delay Time

d(OFF)

Fall Time

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

T = 25°C

0.82

0.68

1.2

= 0 V,

= 50 A

T = 125°C

Reverse Recovery Time

Charge Time

= 0 V, dIS/dt = 100 A/ms,

= 50 A

Discharge Time

Reverse Recovery Charge

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.

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