NVMJS0D9N04CL
MOSFET – Power, Single
N-Channel
40 V, 0.82 mW, 330 A
Features
www.onsemi.com
• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
• LFPAK8 Package, Industry Standard
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
0.82 mW @ 10 V
1.2 mW @ 4.5 V
40 V
330 A
D (5,8)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
V
DSS
Gate−to−Source Voltage
V
GS
20
V
G (4)
Continuous Drain
Current R
Steady
State
T
= 25°C
= 100°C
= 25°C
I
330
230
167
83
A
C
D
q
JC
S (1,2,3)
N−CHANNEL MOSFET
T
C
(Notes 1, 3)
Power Dissipation
T
C
P
W
A
D
R
(Note 1)
q
JC
T
C
= 100°C
Continuous Drain
Current R
Steady
State
T = 25°C
A
I
D
50
MARKING
DIAGRAM
q
JA
T = 100°C
A
35
(Notes 1, 2, 3)
D
D
D
D
Power Dissipation
T = 25°C
P
3.8
1.9
900
W
A
D
R
(Notes 1, 2)
q
JA
T = 100°C
A
0D9N04
CL
AWLYW
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
LFPAK8
CASE 760AA
Operating Junction and Storage Temperature
Range
T , T
J
−55 to
+175
°C
stg
1
Source Current (Body Diode)
I
169
706
A
S
S
S
S G
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
0D9N04CL = Specific Device Code
Energy (I
= 29 A)
L(pk)
A
WL
Y
= Assembly Location
= Wafer Lot
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
L
= Year
= Work Week
W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
0.9
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
36
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
July, 2019 − Rev. 0
NVMJS0D9N04CL/D