Datasheet > NTHL027N65S3HF

NTHL027N65S3HF

更新时间： 2024-01-18 21:21:11

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
10页	413K
描述
功率 MOSFET，N 沟道，SUPERFET® III，FRFET®，650 V，75 A，27.4mΩ，TO-247

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NTHL027N65S3HF 数据手册

NTHL027N65S3HF

ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)

Symbol

Parameter

Value

650

Unit

DSS

GSS

Drain to Source Voltage

Gate to Source Voltage

− DC

− AC (f > 1 Hz)

Drain Current

− Continuous (T = 25°C)

− Continuous (T = 100°C)

Drain Current

− Pulsed (Note 1)

187.5

1610

Single Pulsed Avalanche Energy (Note 2)

Avalanche Current (Note 2)

Repetitive Avalanche Energy (Note 1)

MOSFET dv/dt

5.95

100

V/ns

dv/dt

Peak Diode Recovery dv/dt (Note 3)

Power Dissipation

(T = 25°C)

595

W/°C

°C

− Derate Above 25°C

4.76

−55 to +150

300

T , T

Operating and Storage Temperature Range

STG

Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. Repetitive rating: pulse−width limited by maximum junction temperature.

2. I = 15 A, R = 25 W, starting T = 25°C.

3. I ≤ 37.5 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.

THERMAL CHARACTERISTICS

Symbol

Parameter

Value

0.21

Unit

Thermal Resistance, Junction to Case, Max.

Thermal Resistance, Junction to Ambient, Max.

_C/W

PACKAGE MARKING AND ORDERING INFORMATION

Part Number

Top Marking

Package

Packing Method

Reel Size

Tape Width

N/A

Quantity

NTHL027N65S3HF

TO−247

Tube

N/A

30 Units

www.onsemi.com

123 4 5 6 7...10

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