Datasheet > NTGS3446

NTGS3446

更新时间： 2024-10-02 03:45:51

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	48K
描述
Power MOSFET 5.1 Amps, 20 Volts N−Channel TSOP−6

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NTGS3446 数据手册

NTGS3446

Power MOSFET

5.1 Amps, 20 Volts

N−Channel TSOP−6

Features

• Ultra Low R

DS(on)

http://onsemi.com

• Higher Efficiency Extending Battery Life

• Logic Level Gate Drive

TYP

I MAX

• Diode Exhibits High Speed, Soft Recovery

• Avalanche Energy Specified

(BR)DSS

DS(on)

20 V

36 mW @ 4.5 V

5.1 A

• I

Specified at Elevated Temperature

DSS

• Pb−Free Package Option for Green Manufacturing (G Suffix)

Applications

N−Channel

Drain 1 2 5 6

• Power Management in portable and battery−powered products, i.e.

computers, printers, PCMCIA cards, cellular and cordless

• Lithium Ion Battery Applications

• Notebook PC

Gate 3

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Drain−to−Source Voltage

Gate−to−Source Voltage

Symbol Value

Unit

Source

DSS

MARKING

DIAGRAM

±12

Thermal Resistance

Junction−to−Ambient (Note 1)

Total Power Dissipation @ T = 25°C

Drain Current

244

0.5

°C/W

Watts

TSOP−6

CASE 318G

STYLE 1

446

− Continuous @ T = 25°C

2.5

Amps

− Pulsed Drain Current (t t 10 ms)

Thermal Resistance

446

= Device Code

= Work Week

Junction−to−Ambient (Note 2)

Total Power Dissipation @ T = 25°C

128

1.0

°C/W

Watts

Drain Current

− Continuous @ T = 25°C

− Pulsed Drain Current (t t 10 ms)

3.6

Amps

PIN ASSIGNMENT

Drain Drain Source

Thermal Resistance

Junction−to−Ambient (Note 3)

Total Power Dissipation @ T = 25°C

62.5

2.0

°C/W

Watts

Drain Current

− Continuous @ T = 25°C

− Pulsed Drain Current (t t 10 ms)

5.1

2.0

Amps

Source Current (Body Diode)

5.1

Drain Drain Gate

Operating and Storage Temperature Range

T , T

−55 to

150

°C

stg

ORDERING INFORMATION

Maximum Lead Temperature for Soldering

Purposes for 10 seconds

260

°C

†

Device

Package

Shipping

1. Minimum FR−4 or G−10PCB, operating to steady state.

2. Mounted onto a 2” square FR−4 board (1” sq. 2 oz. cu. 0.06” thick

single−sided), operating to steady state.

3. Mounted onto a 2” square FR−4 board (1” sq. 2 oz. cu. 0.06” thick

single−sided), t < 5.0 seconds.

NTGS3446T1

TSOP−6

3000/Tape & Reel

TSOP−6

(Pb−Free)

NTGS3446T1G

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2003

Publication Order Number:

November, 2003 − Rev. 3

NTGS3446/D

12 3 4

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与NTGS3446相关器件

型号	品牌	获取价格	描述	数据表
NTGS3446/D	ETC	获取价格	Power MOSFET 5 Amps， 20 Volts
NTGS3446T1	ONSEMI	获取价格	Power MOSFET 5.1 Amps, 20 Volts N−Channel TSOP−6
NTGS3446T1G	ONSEMI	获取价格	Power MOSFET 5.1 Amps, 20 Volts N−Channel TSOP−6
NTGS3447P	ONSEMI	获取价格	Power MOSFET -12 V, -5.3 A, Single P-Channel, TSOP-6
NTGS3447PT1G	ONSEMI	获取价格	Power MOSFET -12 V, -5.3 A, Single P-Channel, TSOP-6
NTGS3455T1	ONSEMI	获取价格	MOSFET -3.5 Amps, -30 Volts P−Channel TSOP−6
NTGS3455T1/D	ETC	获取价格	MOSFET -3.5 Amps， -30 Volts
NTGS3455T1_07	ONSEMI	获取价格	MOSFET -3.5 Amps, -30 Volts
NTGS3455T1G	ONSEMI	获取价格	MOSFET -3.5 Amps, -30 Volts P−Channel TSOP−6
NTGS3A033PZT1G	ONSEMI	获取价格	P 沟道，功率 MOSFET，-20V，-5.9A，33mΩ

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