NTE1V115

更新时间： 2024-11-17 22:30:15

品牌	Logo	应用领域
NTE		压敏电阻
页数	文件大小	规格书
3页	31K
描述
Metal Oxide Varistors (MOV)

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中文翻译

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数据手册

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NTE1V115 数据手册

NTE1V010 thru NTE1V300

NTE2V010 thru NTEV480

NTE524V13 thru NTE524V48

Metal Oxide Varistors (MOV)

Description:

The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high

transient current handling capability when high voltage is applied. Static resistance is, however, very high under low volt-

age conditions, permitting low standby drain currents.

The NTE 1V Series Varistors have a non–linear voltage/current characteristic as expressed by the relationship:

I = KV

Where I = The current in amperes

V = The voltage

K = A constant

n = A constant which shows the dependence of

the voltage V upon the current I. It is called

the voltage–dependant index

Features:

High Transient Current Capability – up to 6500A

Fast Response Time – less than 35ns

Excellent Voltage Clamping Characteristics

Very Low Temperature Coefficient

Low Standby Current

High Energy Capability

The Value for “n” is Greater

Very Low Leakage Current

Low Capacitance

Low Overshoot Characteristics

Electrical Ratings:

Varistor Voltage

The voltage across the varistor at a DC current of 1.0mA.

Energy

The maximum electrical energy which can be dissipated within the varistor by a single impulse of 10 x 1000µs current

waveform with continuous voltage applied. Energy ratings are based on a shift of varistor voltage of less than 10% of the

initial value. The unit is expressed in joules.

Peak Current

The maximum current allowable for a single pulse of 8 x 20µs exponential waveform.

Operating Ambient Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +85°C

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C

Response Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . less than 35ns

Voltage Temperature Coefficient . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . less than 0.05%/°C

Non–Linear Exponent

NTE1V010 to NTE1V075, NTE2V010 to NTE2V075 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 to 50

NTE1V095 to NTE1V300, NTE2V095 to NTE2V480, NTE524V13 to NTE542V48 . . . . . . . . . . . greater than 40

Maximum Leakage Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10µA

12 3

中文翻译

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与NTE1V115相关器件

型号	品牌	获取价格	描述	数据表
NTE1V130	NTE	获取价格	Metal Oxide Varistors (MOV)
NTE1V150	NTE	获取价格	Metal Oxide Varistors (MOV)
NTE1V175	NTE	获取价格	Metal Oxide Varistors (MOV)
NTE1V250	NTE	获取价格	Metal Oxide Varistors (MOV)
NTE1V275	NTE	获取价格	Metal Oxide Varistors (MOV)
NTE1V300	NTE	获取价格	Metal Oxide Varistors (MOV)
NTE20	NTE	获取价格	Silicon Complementary Transistors High Power, Low Collector Saturation Voltage Power Outpu
NTE2000	NTE	获取价格	Integrated Circuit Dolby B Type Noise Reduction System
NTE2001	ETC	获取价格	Consumer IC
NTE2003	NTE	获取价格	Integrated Circuit Dolby B-Type Noise Reduction Processor

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