5秒后页面跳转
NTE20 PDF预览

NTE20

更新时间: 2024-09-13 22:50:51
品牌 Logo 应用领域
NTE 晶体晶体管
页数 文件大小 规格书
2页 23K
描述
Silicon Complementary Transistors High Power, Low Collector Saturation Voltage Power Output

NTE20 数据手册

 浏览型号NTE20的Datasheet PDF文件第2页 
NTE20 (NPN) & NTE21 (PNP)  
Silicon Complementary Transistors  
High Power, Low Collector Saturation Voltage  
Power Output  
Features:  
D High Power in a Compact ATR Package: PO = 1W  
Applications:  
D Regulated Power Supplies  
D 1 to 2W Output Stages  
D Drivers  
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)  
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V  
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V  
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V  
Collector Current, IC  
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A  
Pulse  
NTE20 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A  
NTE21 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0A  
Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W  
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +135°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +135°C  
Electrical Characteristics: (TA = +25°C unless otherwise specified)  
Parameter  
Collector–Emitter Breakdown Voltage  
Collector–Base Breakdown Voltage  
Emitter–Base Breakdown Voltage  
Collector Cutoff Current  
Symbol  
Test Conditions  
Min  
32  
40  
5
Typ Max Unit  
V
I = 1mA  
V
V
(BR)CEO  
(BR)CBO  
C
V
I = 50µA  
C
V
I = 50µA  
V
(BR)EBO  
E
I
V
CB  
V
EB  
V
CE  
= 20V  
= 4V  
1
µA  
µA  
CBO  
Emitter Cutoff Current  
I
1
EBO  
DC Current Gain  
h
FE  
= 3V, I = 500mA  
120  
270  
C
Collector Saturation Voltage  
Transition Frequency  
V
CE(sat)  
I = 2A, I = 200mA  
500  
100  
50  
mV  
MHz  
pF  
C
C
f
T
V
= 5V, I = 500mA  
CE  
CB  
C
Output Capacitance  
C
ob  
V
= 10V, f = 1MHz  

NTE20 替代型号

型号 品牌 替代类型 描述 数据表
2SD1227M ROHM

功能相似

Medium Power Transistor 32V, 2A

与NTE20相关器件

型号 品牌 获取价格 描述 数据表
NTE2000 NTE

获取价格

Integrated Circuit Dolby B Type Noise Reduction System
NTE2001 ETC

获取价格

Consumer IC
NTE2003 NTE

获取价格

Integrated Circuit Dolby B-Type Noise Reduction Processor
NTE2004 NTE

获取价格

Integrated Circuit Dolby Noise Reduction Circuit
NTE2011 NTE

获取价格

Integrated Circuit 7-Channel Darlington Array/Driver
NTE2012 NTE

获取价格

Integrated Circuit 7-Channel Darlington Array/Driver
NTE2013 NTE

获取价格

Integrated Circuit 7-Channel Darlington Array/Driver
NTE2014 NTE

获取价格

Integrated Circuit 7-Channel Darlington Array/Driver
NTE2015 NTE

获取价格

Integrated Circuit 7-Channel Darlington Array/Driver
NTE2016 NTE

获取价格

Integrated Circuit 8-Channel Darlington Array/Driver