Datasheet > 晶体管 > 功率双极晶体管> NTE2014

NTE2014

更新时间： 2024-11-04 22:50:51

品牌	Logo	应用领域
NTE		晶体驱动器晶体管功率双极晶体管开关光电二极管
页数	文件大小	规格书
3页	27K
描述
Integrated Circuit 7-Channel Darlington Array/Driver

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NTE2014 技术参数

生命周期：	Active	零件包装代码：	DIP
包装说明：	DIP-16	针数：	16
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.29.00.95	风险等级：	5.71
Is Samacsys：	N	最大集电极电流 (IC)：	0.5 A
集电极-发射极最大电压：	50 V	配置：	COMPLEX
JESD-30 代码：	R-PDIP-T16	元件数量：	7
端子数量：	16	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	IN-LINE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

NTE2014 数据手册

NTE2011/NTE2012/NTE2013/NTE2014/NTE2015

Integrated Circuit

7–Channel Darlington Array/Driver

Description:

The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP

type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic sub-

strate. All units have open–collector outputs and integral diodes for inductive load transient suppres-

sion.

Peak inrush currents to 600mA (NTE2011, NTE2013, NTE2014) or 750mA (NTE2012, NTE2015) are

permissible, making them ideal for driving tungstun filament lamps.

The NTE2011 is a general purpose array that may be used with standard bi–polar digital logic using

external current limiting, or with most PMOS or CMOS directly. This device is pinned with outputs

opposite inputs to facilitate printed wiring board layouts.

The NTE2012 is designed for use with 14V to 25V PMOS devices. Each input has a Zener diode and

resistor in series to limit the input current to a safe value in that application. The Zener diode also gives

this device excellent noise immunity.

The NTE2013 has a 2.7kΩ series base resistor for each Darlington pair, allowing operation directly

with TTL or CMOS operating at a supply voltage of 5V. This device will handle numerous interface

needs – particularly those beyond the capabilities of standard logic buffers.

The NTE2014 has a 10.5kΩ series input resistor that permits operation directly from CMOS or PMOS

outputs utilizing supply voltages of 6V to 15V. The required input current is below that of the NTE2013,

while the required input voltage is less than that required by the NTE2012.

The NTE2015 is designed for use with standard TTL and Schottky TTL, with which higher output cur-

rents are required and loading of the logic output is not a concern. This device will sink a minimum

of 350mA when driven from a “totem pole” logic output.

Absolute Maximum Ratings: (T_A= +25°C for any one Darlington pair unless otherwise specified)

Output Voltage, V_CE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V

Input Voltage, V_IN

NTE2012, NTE2013, NTE2014 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V

NTE2015 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V

Continuous Collector Current. I_C

NTE2011, NTE2013, NTE2014 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA

NTE2012, NTE2015 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA

Continuous Input Current, I_IN. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA

Power Dissipation, P_D

One Darlington Pair . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W

Total Device (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W

Operating Ambient Temperature Range, T_A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –20° to +85°C

Storage Temperature Range, T_stg. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Note 1. The NTE2015 is a discontinued device and no longer available.

Note 2. Derate at the rate of 16.6mW/°C above +25°C.

Note 3. Under normal operating conditions, these devices will sustain 350mA per output with

V_CE(sat)= 1.6V at +70°C with a pulse width of 20ms and a duty cycle of 34%.

12 3

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与NTE2014相关器件

型号	品牌	获取价格	描述	数据表
NTE2015	NTE	获取价格	Integrated Circuit 7-Channel Darlington Array/Driver
NTE2016	NTE	获取价格	Integrated Circuit 8-Channel Darlington Array/Driver
NTE2017	NTE	获取价格	Integrated Circuit 8-Channel Darlington Array/Driver
NTE2018	NTE	获取价格	Integrated Circuit 8-Channel Darlington Array/Driver
NTE2019	NTE	获取价格	Integrated Circuit 8-Channel Darlington Array/Driver
NTE2020	NTE	获取价格	Integrated Circuit 8-Channel Darlington Array/Driver
NTE2021	NTE	获取价格	Integrated Circuit 8-Digit/Segment Fluorescent Display Driver
NTE2022	NTE	获取价格	Integrated Circuit 8-Digit/Segment Fluorescent Display Driver
NTE2023	NTE	获取价格	Integrated Circuit General Purpose, High Current 7-Segment Display Driver
NTE2024	NTE	获取价格	Integrated Circuit 2-Digit BCD-to-7-Segment Decoder/Driver

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