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NTE2018 PDF预览

NTE2018

更新时间: 2024-11-03 22:50:51
品牌 Logo 应用领域
NTE 驱动器
页数 文件大小 规格书
3页 27K
描述
Integrated Circuit 8-Channel Darlington Array/Driver

NTE2018 技术参数

生命周期:Active零件包装代码:DIP
包装说明:DIP-18针数:18
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:2.13
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:50 V
配置:COMPLEXJESD-30 代码:R-PDIP-T18
元件数量:8端子数量:18
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

NTE2018 数据手册

 浏览型号NTE2018的Datasheet PDF文件第2页浏览型号NTE2018的Datasheet PDF文件第3页 
NTE2016/NTE2017/NTE2018/NTE2019/NTE2020  
Integrated Circuit  
8–Channel Darlington Array/Driver  
Description:  
Ideally suited for interfacing between low–level digital logic circuitry and high–power peripheral loads,  
the NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in an 18–Lead DIP  
type package and feature peak load current ratings to 600mA (NTE2016, NTE2019) or 750mA  
(NTE2017, NTE2018, NTE2020) for each of the eight drivers in each device. Under the proper condi-  
tions, high–power loads up to 4A at 50V (200W at 23% duty cycle) or 3.2A at 95V (304W at 33% duty  
cycle) can be controlled. Typical loads include relays, solenoids, stepping motors, multiplexed LED  
and incadescent displays, and heaters. All devices feature open collector outputs and integral diodes  
for inductive load transient suppression.  
The NTE2016 is a general purpose array that may be used with standard bi–polar digital logic using  
external current limiting, or with most PMOS or CMOS directly. This device is pinned with outputs  
opposite inputs to facilitate printed wiring board layouts.  
The NTE2017 is designed for use with 14V to 25V PMOS devices. Each input has a Zener diode and  
resistor in series to limit the input current to a safe value in that application. The Zener diode also gives  
this deVicee excellent noise immunity.  
The NTE2018 has a 2.7kseries base resistor for each Darlington pair, allowing operation directly  
with TTL or CMOS operating at a supply voltage of 5V. This device will handle numerous interface  
needs – particularly those beyond the capabilities of standard logic buffers.  
The NTE2019 has a 10.5kseries input resistor that permits operation directly from CMOS or PMOS  
outputs utilizing supply voltages of 6V to 15V. The required input current is below that of the NTE2018,  
while the required input voltage is less than that required by the NTE2017.  
The NTE2020 is designed for use with standard TTL and Schottky TTL, with which higher output cur-  
rents are required and loading of the logic output is not a concern. This device will sink a minimum  
of 350mA when driven from a “totem pole” logic output.  
Absolute Maximum Ratings: (TA = +25°C for any one Darlington pair unless otherwise specified)  
Output Voltage, VCE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V  
Input Voltage, VIN  
NTE2017, NTE2018, NTE2019 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V  
NTE2020 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V  
Continuous Collector Current. IC  
NTE2016, NTE2019 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA  
NTE2017, NTE2018, NTE2020 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA  
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA  
Power Dissipation, PD  
One Darlington Pair . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W  
Total Device (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.25W  
Operating Ambient Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –20° to +85°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C  
Note 1. Derate at the rate of 18.18mW/°C above +25°C.  
Note 2. Under normal operating conditions, these devices will sustain 350mA per output with  
VCE(sat) = 1.6V at +50°C with a pulse width of 20ms and a duty cycle of 40%.  

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