Datasheet > NTD95N02R

NTD95N02R

更新时间： 2024-09-15 06:00:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	67K
描述
Power MOSFET 95 Amps, 24 Volts N−Channel DPAK

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NTD95N02R 数据手册

NTD95N02R

Power MOSFET

95 Amps, 24 Volts

N−Channel DPAK

Features

http://onsemi.com

• High Power and Current Handling Capability

• Fast Switching Performance

TYP

I MAX*

(BR)DSS

DS(ON)

4.5 mW @ 10 V

5.9 mW @ 4.5 V

• Low R

to Minimize Conduction Loss

DS(on)

24 V

95 A

• Low Gate Charge to Minimize Switching Losses

• Pb−Free Packages are Available

*I MAX in the product summary table is continuous

and steady at 25°C.

Applications

• CPU Motherboard Vcore Applications

• High Frequency DC−DC Converters

• Motor Drives

• Bridge Circuits

MAXIMUM RATINGS (T = 25°C unless otherwise specified)

MARKING DIAGRAMS

& PIN ASSIGNMENTS

Parameter

Drain−to−Source Voltage

Symbol Value

Unit

DSS

Gate−to−Source Voltage

Drain

Thermal Resistance, Junction−to−Case

1.45

°C/W

Total Power Dissipation @ T = 25°C

Drain Current –

DPAK

− Continuous @ T = 25°C, Limited by Package

CASE 369AA

(Surface Mount)

STYLE 2

− Continuous @ T = 25°C, Limited by Wires

Thermal Resistance, Junction−to− Ambient

(Note 1)

°C/W

− Total Power Dissipation @ T = 25°C

2.4

15.8

Gate

Drain

− Drain Current − Continuous @ T = 25°C

Source

Thermal Resistance, Junction−to−Ambient

(Note 2)

100

°C/W

− Total Power Dissipation @ T = 25°C

1.25

Drain

− Drain Current − Continuous @ T = 25°C

Operating Junction and Storage Temperature

T ,

−55 to

150

°C

DPAK

CASE 369D

(Straight Lead)

STYLE 2

STG

Continuous Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

Energy – (V = 25 V, V = 10, I = 13 A,

L = 1 mH, R = 25 W)

Lead Temperature for Soldering Purposes

(1/8 in from case for 10 seconds)

260

°C

Gate Drain Source

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq

[1 oz] including traces).

T95N02R

= Year

= Work Week

= Device Code

= Pb−Free Package

2. Surface mounted on FR4 board using the minimum recommended pad size

(Cu area = 0.412 in sq).

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

July, 2006 − Rev. 3

NTD95N02R/D

12 3 4 5 6

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与NTD95N02R相关器件

型号	品牌	获取价格	描述	数据表
NTD95N02R-001	ONSEMI	获取价格	Power MOSFET 95 Amps, 24 Volts N−Channel DPAK
NTD95N02R-001G	ONSEMI	获取价格	Power MOSFET 95 Amps, 24 Volts N−Channel DPAK
NTD95N02RG	ONSEMI	获取价格	Power MOSFET 95 Amps, 24 Volts N−Channel DPAK
NTD95N02RT4	ONSEMI	获取价格	Power MOSFET 95 Amps, 24 Volts N−Channel DPAK
NTD95N02RT4G	ONSEMI	获取价格	Power MOSFET 95 Amps, 24 Volts N−Channel DPAK
NTD985	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 60V V(BR)CEO \| 2A I(C) \| TO-126VAR
NTD986	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 80V V(BR)CEO \| 2A I(C) \| TO-126VAR
NTD987	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 400V V(BR)CEO \| 5A I(C) \| TO-220AB
NTDM-110-14	TECHNOLOGY	获取价格	SWITCHING POWER SUPPLIES
NTDM-110-14		获取价格	1500-3000 WATT SINGLE OUTPUT SWITCHING POWER SUPPLIES

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