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NT6DM16M32BD-T1I PDF预览

NT6DM16M32BD-T1I

更新时间: 2024-09-22 02:45:23
品牌 Logo 应用领域
南亚科技 - NANYA 动态存储器双倍数据速率
页数 文件大小 规格书
81页 4431K
描述
Commercial and Industrial Mobile DDR 512Mb SDRAM

NT6DM16M32BD-T1I 数据手册

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Nanya Technology Corp.  
NT6DM32M16BD / NT6DM16M32BC  
Commercial and Industrial Mobile DDR 512Mb SDRAM  
Features  
Data Integrity  
JEDEC LPDDR Compliant  
- Low Power Consumption  
- DRAM built-in Temperature Sensor for  
Temperature Compensated Self Refresh (TCSR)  
- 2n Prefetch Architecture  
- Auto Refresh and Self Refresh Modes  
Power Saving Mode  
- Differential clock inputs (CK and )  
- Double-data rate on DQs, DQS and DM  
- Commands entered on each positive CK edge  
- Deep Power Down Mode (DPD)  
- Partial Array Self Refresh (PASR)  
- Clock Stop capability during idle period  
LVCMOS Interface and Power Supply  
- VDD/VDDQ=1.70 to 1.95V  
- DQS edge-aligned with data for READs;  
center-aligned with data for WRITEs  
- Status Register Read (SRR)  
Signal Integrity  
- Configurable DS for system compatibility  
Options  
Speed Grade (CL-TRCD-TRP) 1  
Temperature Range (Tc)  
- Commercial Grade = -25~85℃  
- Industrial Grade = -40~85℃  
- 333 Mbps / 3-3-3  
- 400 Mbps / 3-3-3  
Programmable Functions  
Burst Type (Sequential, Interleaved)  
Driver Strength (full, 1/2, 3/4, 1/4)  
CAS Latency (2, 3)  
Burst Length (2, 4, 8, 16)  
Packages / Density Information  
Density and Addressing  
512Mb  
Lead-free RoHS compliance and Halogen-free  
Item  
512Mb  
Length x Width  
(mm)  
Ball pitch  
(mm)  
(Org / Package)  
Addressing  
Organization  
Number of banks  
Bank Address  
Auto precharge  
Row Address  
Column Address  
tRFC(ns) 2  
Standard  
Reduced Page Size  
32M x 16 16M x 32  
16M x 32  
4
4
4
60-ball  
32Mx16  
8.00 x 9.00  
0.80  
0.80  
BA0,BA1 BA0,BA1  
BA0,BA1  
A10/AP  
A0-A13  
A0-A7  
110  
VFBGA  
A10/AP  
A0-A12  
A0-A9  
110  
A10/AP  
A0-A12  
A0-A8  
110  
90-ball  
16Mx32  
8.00 x 13.00  
VFBGA  
tREFI (µs) 3  
7.8  
7.8  
7.8  
Notes:  
1. The timing specification of high speed bin is backward compatible with low speed bin.  
2. Violating tRFC specification will induce malfunction.  
3. tREFI values for all bank refresh is within temperature specification(<= 85).  
Version 1.4  
01/2016  
1
Nanya Technology Corporation ©  
All Rights Reserved  
NTC has the rights to change any specification or product without notification.  

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