Datasheet > NT5CB128M16IP-EK1

NT5CB128M16IP-EK1

更新时间： 2024-11-25 00:35:47

品牌	Logo	应用领域
南亚科技 - NANYA		动态存储器双倍数据速率
页数	文件大小	规格书
162页	4874K
描述
Commercial, Industrial and Automotive DDR3(L) 2Gb SDRAM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NT5CB128M16IP-EK1 数据手册

浏览型号NT5CB128M16IP-EK1的Datasheet PDF文件第2页

浏览型号NT5CB128M16IP-EK1的Datasheet PDF文件第3页

浏览型号NT5CB128M16IP-EK1的Datasheet PDF文件第4页

浏览型号NT5CB128M16IP-EK1的Datasheet PDF文件第5页

浏览型号NT5CB128M16IP-EK1的Datasheet PDF文件第6页

浏览型号NT5CB128M16IP-EK1的Datasheet PDF文件第7页

NTC Proprietary

Level: Property

DDR3(L) 2Gb SDRAM

NT5CB(C)256M8IN / NT5CB(C)128M16IP

Commercial, Industrial and Automotive DDR3(L) 2Gb SDRAM

Features



Signal Integrity



JEDEC DDR3 Compliant

- Configurable DS for system compatibility

- Configurable On-Die Termination

- 8n Prefetch Architecture

- Differential Clock(CK/) and Data Strobe(DQS/)

- Double-data rate on DQs, DQS and DM

Data Integrity

- ZQ Calibration for DS/ODT impedance accuracy via

external ZQ pad (240 ohm ± 1%)



Signal Synchronization

- Write Leveling via MR settings ⁶

- Auto Self Refresh (ASR) by DRAM built-in TS

- Auto Refresh and Self Refresh Modes

Power Saving Mode

- Read Leveling via MPR

Interface and Power Supply

- Partial Array Self Refresh (PASR) ¹

- SSTL_15 for DDR3:VDD/VDDQ=1.5V(±0.075V)

- SSTL_135³for DDR3L:VDD/VDDQ=1.35V(-0.067/+0.1V)

- Power Down Mode

Options

 Speed Grade (CL-TRCD-TRP) ²

 Temperature Range (T_c) ⁴

- Commercial Grade = 0℃~95℃

- 2133 Mbps / 14-14-14

- 1866 Mbps / 13-13-13

- 1600 Mbps / 11-11-11

- Quasi Industrial Grade (-T) = -40℃~95℃

- Industrial Grade (-I) = -40℃~95℃

- Automotive Grade 2 (-H) = -40℃~105℃

- Automotive Grade 3 (-A) = -40℃~95℃

Programmable Functions



Self RefreshTemperature Range(Normal/Extended)



CAS Latency (6/7/8/9/10/11/13/14)

CAS Write Latency (5/6/7/8/9/10)



Output Driver Impedance (34/40)

On-Die Termination of Rtt_Nom(20/30/40/60/120)

On-Die Termination of Rtt_WR(60/120)

Precharge Power Down (slow/fast)

Additive Latency (0/CL-1/CL-2)

Write Recovery Time (5/6/7/8/10/12/14/16)

Burst Type (Sequential/Interleaved)

Burst Length (BL8/BC4/BC4 or 8 on the fly)

Packages / Density Information

Density and Addressing

256Mb x 8

Lead-free RoHS compliance and Halogen-free

Organization

128Mb x 16

2Gb

Length x Width

(mm)

Ball pitch

(mm)

Bank Address

Auto precharge

BL switch on the fly

Row Address

Column Address

Page Size

BA0 – BA2

A10 / AP

A12 / 

A0 – A14

A0 – A9

1KB

BA0 – BA2

A10 / AP

A12 / 

A0 – A13

A0 – A9

2KB

(Org. / Package)

78-ball

256Mbx8

8.00 x 10.50

8.00 x 13.00

0.80

VFBGA

96-ball

tREFI(us) ⁴

Tc<=85℃:7.8, Tc>85℃:3.9

160ns

128Mbx16

VFBGA

tRFC(ns) ⁵

NOTE 1 Default state of PASR is disabed. This is enabled by using an electrical fuse. Please contact with NTC for the demand.

NOTE 2 Please refer to ordering information for the detail.

NOTE 3 1.35V DDR3L are backward compatible to 1.5V DDR3 parts. Please refer to page 5 operating frequency table.1.35V DDR3L-RS parts are exceptional

and unallowable to be compatible to 1.35V DDR3L and 1.5V DDR3 parts.

NOTE 4 If T_Cexceeds 85°C, the DRAM must be refreshed externally at 2x refresh, which is a 3.9us interval refresh rate. Extended SRT or ASR must be enabled.

NOTE 5 Violating tRFC specification will induce malfunction.

NOTE 6 Only Support prime DQ’s feedback for each byte lane.

Version 2.1

07/2017

NTC has the rights to change any specifications or product without notification.

12 3 4 5 6 7...162

中文翻译

下载PDF

与NT5CB128M16IP-EK1相关器件

型号	品牌	获取价格	描述	数据表
NT5CB128M16IP-EKA	NANYA	获取价格	Commercial, Industrial and Automotive DDR3(L) 2Gb SDRAM
NT5CB128M16IP-EKB	NANYA	获取价格	Commercial, Industrial and Automotive DDR3(L) 2Gb SDRAM
NT5CB128M16IP-EKH	NANYA	获取价格	Commercial, Industrial and Automotive DDR3(L) 2Gb SDRAM
NT5CB128M16IP-EKI	NANYA	获取价格	Commercial, Industrial and Automotive DDR3(L) 2Gb SDRAM
NT5CB128M16IP-EKNA	NANYA	获取价格	Commercial, Industrial and Automotive DDR3(L) 2Gb SDRAM
NT5CB128M16IP-EKT	NANYA	获取价格	Commercial, Industrial and Automotive DDR3(L) 2Gb SDRAM
NT5CB128M16IP-FL	NANYA	获取价格	Commercial, Industrial and Automotive DDR3(L) 2Gb SDRAM
NT5CB128M16IP-FLA	NANYA	获取价格	Commercial, Industrial and Automotive DDR3(L) 2Gb SDRAM
NT5CB128M16IP-FLB	NANYA	获取价格	Commercial, Industrial and Automotive DDR3(L) 2Gb SDRAM
NT5CB128M16IP-FLH	NANYA	获取价格	Commercial, Industrial and Automotive DDR3(L) 2Gb SDRAM

与NT5CB128M16IP-EK1相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

38
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

30
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

58
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

54

产品中心

服务支持

精选活动

关于我们

帮助中心

NT5CB128M16IP-EK1

NT5CB128M16IP-EK1 数据手册

与NT5CB128M16IP-EK1相关器件

与NT5CB128M16IP-EK1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NT5CB128M16IP-EK1

NT5CB128M16IP-EK1 数据手册

与NT5CB128M16IP-EK1相关器件

与NT5CB128M16IP-EK1相关文章

您还可以找

您在本页遇到什么问题？