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NRVBM120ET3G PDF预览

NRVBM120ET3G

更新时间： 2024-09-28 01:15:51
品牌 Logo 应用领域
安森美 - ONSEMI 二极管
页数 文件大小 规格书
6页 180K
描述
Surface Mount Schottky Power Rectifier

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中文翻译

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NRVBM120ET3G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：DO-216AA包装说明：R-PSSO-G1
针数：2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
Factory Lead Time：5 weeks风险等级：5.16
外壳连接：CATHODE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.36 VJEDEC-95代码：DO-216AA
JESD-30 代码：R-PSSO-G1JESD-609代码：e3
湿度敏感等级：1最大非重复峰值正向电流：50 A
元件数量：1端子数量：1
最高工作温度：150 °C最低工作温度：-65 °C
最大输出电流：1 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED参考标准：AEC-Q101
最大重复峰值反向电压：20 V子类别：Rectifier Diodes
表面贴装：YES技术：SCHOTTKY
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

NRVBM120ET3G 数据手册

 浏览型号NRVBM120ET3G的Datasheet PDF文件第2页浏览型号NRVBM120ET3G的Datasheet PDF文件第3页浏览型号NRVBM120ET3G的Datasheet PDF文件第4页浏览型号NRVBM120ET3G的Datasheet PDF文件第5页浏览型号NRVBM120ET3G的Datasheet PDF文件第6页 
MBRM120ET1G,  
NRVBM120ET1G,  
MBRM120ET3G,  
NRVBM120ET3G  
Surface Mount  
Schottky Power Rectifier  
http://onsemi.com  
POWERMITE  
SCHOTTKY BARRIER  
RECTIFIER  
1.0 AMPERES, 20 VOLTS  
Power Surface Mount Package  
The Schottky POWERMITE employs the Schottky Barrier  
principle with a barrier metal and epitaxial construction that produces  
optimal forward voltage drop−reverse current tradeoff. The advanced  
packaging techniques provide for a highly efficient micro miniature,  
space saving surface mount Rectifier. With its unique heatsink design,  
the POWERMITE has the same thermal performance as the SMA  
while being 50% smaller in footprint area, and delivering one of the  
lowest height profiles, 1.1 mm in the industry. Because of its small  
size, it is ideal for use in portable and battery powered products such as  
cellular and cordless phones, chargers, notebook computers, printers,  
PDAs and PCMCIA cards. Typical applications are AC−DC and  
DC−DC converters, reverse battery protection, and “Oring” of  
multiple supply voltages and any other application where performance  
and size are critical.  
POWERMITE  
CASE 457  
STYLE 1  
MARKING DIAGRAM  
M
BCVG  
1
2
Features  
Low Profile − Maximum Height of 1.1 mm  
Small Footprint − Footprint Area of 8.45 mm2  
Low V Provides Higher Efficiency and Extends Battery Life  
F
BCV  
M
G
= Device Code  
= Date Code  
= Pb−Free Package  
ESD Ratings:  
Machine Model = C (> 400 V)  
Human Body Model = 3B (> 16,000 V)  
ORDERING INFORMATION  
Supplied in 12 mm Tape and Reel  
Low Thermal Resistance with Direct Thermal Path of Die on  
Exposed Cathode Heat Sink  
AEC−Q101 Qualified and PPAP Capable  
NRVB Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements  
All Packages are Pb−Free*  
†
Device  
Package  
Shipping  
MBRM120ET1G  
NRVBM120ET1G  
MBRM120ET3G  
NRVBM120ET3G  
POWERMITE  
(Pb−Free)  
3,000 /  
Tape & Reel  
POWERMITE  
(Pb−Free)  
3,000 /  
Tape & Reel  
POWERMITE  
(Pb−Free)  
12,000 /  
Tape & Reel  
Mechanical Characteristics  
POWERMITE  
(Pb−Free)  
12,000 /  
POWERMITE is JEDEC Registered as DO−216AA  
Tape & Reel  
Case: Molded Epoxy  
Epoxy Meets UL 94 V−0 @ 0.125 in  
Weight: 16.3 mg (approximately)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Lead and Mounting Surface Temperature for Soldering Purposes  
260C Maximum for 10 Seconds  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
January, 2012 − Rev. 3  
MBRM120E/D  
123456

中文翻译

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NRVBM120ET3G 替代型号

型号 品牌 替代类型 描述 数据表
NRVBM120ET1G ONSEMI

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