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NRVBM110LT1G

更新时间： 2024-09-28 01:19:03
品牌 Logo 应用领域
安森美 - ONSEMI 二极管
页数 文件大小 规格书
5页 157K
描述
Surface Mount Schottky Power Rectifier

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中文翻译

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NRVBM110LT1G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：DO-216AA包装说明：LEAD FREE, MICRO MINIATURE, PLASTIC, CASE 457-04, POWERMITE-2
针数：2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
Factory Lead Time：5 weeks风险等级：1.77
外壳连接：CATHODE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.175 VJEDEC-95代码：DO-216AA
JESD-30 代码：R-PSSO-G1JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：1最高工作温度：125 °C
最低工作温度：-55 °C最大输出电流：1 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
参考标准：AEC-Q101最大重复峰值反向电压：10 V
子类别：Rectifier Diodes表面贴装：YES
技术：SCHOTTKY端子面层：Tin (Sn)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

NRVBM110LT1G 数据手册

 浏览型号NRVBM110LT1G的Datasheet PDF文件第2页浏览型号NRVBM110LT1G的Datasheet PDF文件第3页浏览型号NRVBM110LT1G的Datasheet PDF文件第4页浏览型号NRVBM110LT1G的Datasheet PDF文件第5页 
MBRM110LT1G,  
NRVBM110LT1G,  
NRVBM110LT3G  
Surface Mount  
Schottky Power Rectifier  
POWERMITE  
Power Surface Mount Package  
http://onsemi.com  
SCHOTTKY BARRIER  
RECTIFIER  
1.0 AMPERES, 10 VOLTS  
The Schottky POWERMITE employs the Schottky Barrier  
principle with a barrier metal and epitaxial construction that produces  
optimal forward voltage drop−reverse current tradeoff. The advanced  
packaging techniques provide for a highly efficient micro miniature,  
space saving surface mount Rectifier. With its unique heatsink design,  
the POWERMITE has the same thermal performance as the SMA  
ANODE  
while being 50% smaller in footprint area, and delivering one of the  
lowest height profiles, 1.1 mm in the industry. Because of its small  
size, it is ideal for use in portable and battery powered products such as  
cellular and cordless phones, chargers, notebook computers, printers,  
PDAs and PCMCIA cards. Typical applications are AC−DC and  
DC−DC converters, reverse battery protection, and “ORing” of  
multiple supply voltages and any other application where performance  
and size are critical.  
CATHODE  
POWERMITE  
CASE 457  
PLASTIC  
MARKING DIAGRAM  
Features  
Ultra Low V  
M
1L1G  
1
2
F
1st in Marketplace with a 10 V Schottky Rectifier  
R
Low Profile − Maximum Height of 1.1 mm  
Small Footprint − Footprint Area of 8.45 mm  
M
= Date Code  
2
1L1 = Device Code  
G
= Pb−Free Package  
Low Thermal Resistance with Direct Thermal Path of Die on  
Exposed Cathode Heat Sink  
ESD Ratings:  
ORDERING INFORMATION  
†
Human Body Model > 4000 V (Class 3)  
Machine Model > 400 V (Class C)  
Device  
MBRM110LT1G  
Package  
Shipping  
POWERMITE  
3,000 /  
AEC−Q101 Qualified and PPAP Capable  
(Pb−Free)  
Tape & Reel  
NRVB Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements  
All Packages are Pb−Free*  
NRVBM110LT1G POWERMITE  
3,000 /  
Tape & Reel  
(Pb−Free)  
MBRM110LT3G  
POWERMITE  
12,000 /  
Tape & Reel  
(Pb−Free)  
Mechanical Characteristics:  
POWERMITE is JEDEC Registered as D0−216AA  
NRVBM110LT3G POWERMITE  
12,000 /  
Tape & Reel  
(Pb−Free)  
Case: Molded Epoxy  
Epoxy Meets UL 94 V−0 @ 0.125 in  
Weight: 62 mg (Approximately)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Lead and Mounting Surface Temperature for Soldering Purposes:  
260C Maximum for 10 Seconds  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
January, 2012 − Rev. 2  
MBRM110L/D  
12345

中文翻译

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