生命周期: | Transferred | 零件包装代码: | TO-251 |
包装说明: | IN-LINE, R-PSIP-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.46 |
雪崩能效等级(Eas): | 108 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 55 V | 最大漏极电流 (ID): | 36 A |
最大漏源导通电阻: | 0.018 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-251 | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 144 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
NP36N055IHE | NEC | Power Field-Effect Transistor, 36A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Met |
获取价格 |
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NP36N055IHE-E1 | RENESAS | TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,36A I(D),TO-252 |
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NP36N055IHE-E1 | NEC | TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,36A I(D),TO-252 |
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NP36N055IHE-E1-AY | RENESAS | TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,36A I(D),TO-252 |
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NP36N055IHE-E1-AZ | RENESAS | Power Field-Effect Transistor, 36A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Met |
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|
NP36N055IHE-E1-AZ | NEC | Power Field-Effect Transistor, 36A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Met |
获取价格 |