Datasheet > NP36N055SHE-AZ

NP36N055SHE-AZ

更新时间： 2023-03-15 00:00:00

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日电电子 - NEC		/
页数	文件大小	规格书
7页	169K
描述
TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,36A I(D),TO-252

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NP36N055SHE-AZ 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

NP36N055HHE, NP36N055IHE, NP36N055SHE

SWITCHING

N-CHANNEL POWER MOSFET

DESCRIPTION

These products are N-Channel MOS Field Effect Transistor

designed for high current switching applications.

ORDERING INFORMATION

PART NUMBER

PACKAGE

NP36N055HHE

TO-251 (JEITA) / MP-3

TO-252 (JEITA) / MP-3Z

TO-252 (JEDEC) / MP-3ZK

Note

NP36N055IHE

FEATURES

• Channel temperature 175 degree rated

• Super low on-state resistance

R^DS(on)= 14 mΩ MAX. (VGS = 10 V, ID = 18 A)

• Low C^iss: Ciss = 2300 pF TYP.

• Built-in gate protection diode

NP36N055SHE

Note Not for new design.

(TO-251)

(TO-252)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage

VDSS

V^GSS

ID(DC)

ID(pulse)

±20

Gate to Source Voltage

Drain Current (DC)

±36

Drain Current (Pulse) ^Note1

Total Power Dissipation (T^A= 25°C)

Total Power Dissipation (TC = 25°C)

Single Avalanche Current ^Note2

Single Avalanche Energy ^Note2

Channel Temperature

±144

1.2

120

I^AS

36 / 33

12 / 108

175

EAS

°C

Tch

Storage Temperature

T^stg

–55 to + 175 °C

Notes 1. PW ≤ 10 µ s, Duty Cycle ≤ 1%

2. Starting T^ch= 25°C, RG = 25 Ω, VGS = 20 → 0 V (See Figure 4.)

THERMAL RESISTANCE

Channel to Case Thermal Resistance

Channel to Ambient Thermal Resistance

Rth(ch-C)

Rth(ch-A)

1.25

125

°C/W

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No.

D14152EJ4V0DS00 (4th edition)

The mark

shows major revised points.

Date Published July 2005 NS CP(K)

Printed in Japan

1999, 2005

12 3 4 5 6 7

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