是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Lifetime Buy | 零件包装代码: | TO-252AA |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 4 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.29 |
其他特性: | TAPE AND REEL | 雪崩能效等级(Eas): | 108 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 55 V | 最大漏极电流 (Abs) (ID): | 36 A |
最大漏极电流 (ID): | 36 A | 最大漏源导通电阻: | 0.018 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-252AA |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 120 W | 最大脉冲漏极电流 (IDM): | 144 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NP36N055ILE-E2 | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,36A I(D),TO-252 | |
NP36N055ILE-E2-AY | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,36A I(D),TO-252 | |
NP36N055ILE-E2-AZ | RENESAS |
获取价格 |
Power Field-Effect Transistor, 36A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Met | |
NP36N055ILE-E2-AZ | NEC |
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Power Field-Effect Transistor, 36A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Met | |
NP36N055SHE | RENESAS |
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Product Scout Automotive | |
NP36N055SHE-AZ | NEC |
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TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,36A I(D),TO-252 | |
NP36N055SHE-E2-AY | RENESAS |
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TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,36A I(D),TO-252AA | |
NP36N055SLE | RENESAS |
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Product Scout Automotive | |
NP36N055SLE-AZ | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,36A I(D),TO-252 | |
NP36N055SLE-E1-AY | NEC |
获取价格 |
Power Field-Effect Transistor, 36A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Met |