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NP2600GBRLG PDF预览

NP2600GBRLG

更新时间： 2024-11-25 20:57:47
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
3页 68K
描述
300V, SILICON SURGE PROTECTOR, DO-15, ROHS COMPLIANT, PLASTIC, CASE 59AA-01, 2 PIN

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中文翻译

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NP2600GBRLG 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：DO-15包装说明：LONG FORM, O-PALF-W2
针数：2Reach Compliance Code：compliant
HTS代码：8541.30.00.80风险等级：5.83
其他特性：UL RECOGNIZED最大转折电压：300 V
外壳连接：ISOLATED配置：SINGLE
最大断态直流电压：220 V最大维持电流：150000 mA
JEDEC-95代码：DO-15JESD-30 代码：O-PALF-W2
元件数量：1端子数量：2
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified子类别：Silicon Surge Protectors
表面贴装：NO端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT SPECIFIED
触发设备类型：SILICON SURGE PROTECTORBase Number Matches：1

NP2600GBRLG 数据手册

 浏览型号NP2600GBRLG的Datasheet PDF文件第2页浏览型号NP2600GBRLG的Datasheet PDF文件第3页 
NP2600SA1, NP2600SB1,  
NP2600SC1  
Preferred Devices  
Advance Information  
Thyristor Surge Protector  
High Voltage Bidirectional TSPD  
http://onsemi.com  
This Thyristor Surge Protective device (TSPD) prevents  
overvoltage damage to sensitive circuits from lightning, induction and  
power line crossings. This is a breakover-triggered crowbar protector.  
Turn-of f occurs when the surge current falls below the holding current  
value.  
(
)
BIDIRECTIONAL TSPD  
50, 80, AND 100 AMP SURGE  
260 VOLTS  
HIGH HOLD CURRENT  
270 mA MIN  
Features  
•ꢀHigh Surge Current Capability: 50 A, 80 A & 100 A, 10 x 1000 msec,  
for Controlled Temperature Environments  
•ꢀThe NP2600Sx is used to help equipment meet various regulatory  
requirements including: Bellcore 1089, ITU K.20 & K.21, IEC 950,  
UL 1459 & 1950 and FCC Part 68.  
MT1  
MT2  
•ꢀBidirectional Protection in a Single Device  
•ꢀLittle Change of Voltage Limit with Transient Amplitude or Rate  
•ꢀFreedom from Wearout Mechanisms Present in Non-Semiconductor  
Devices  
MARKING  
DIAGRAM  
SMB  
AYWW  
261xG  
G
•ꢀFail-Safe, Shorts When Overstressed, Preventing Continued  
Unprotected Operation  
(No Polarity)  
(JEDEC DO-214AA)  
CASE 403C  
•ꢀSurface Mount Technology  
•ꢀ Indicates UL Registered - File #E210057  
•ꢀThis is a Pb-Free Device  
261x = Device Code  
= A, B or C  
x
A
Y
= Assembly Location  
= Year  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
WW = Work Week  
G
= Pb-Free Package  
Rating  
Off-State Voltage - Maximum  
NP2600Sx1  
Value  
"220  
Unit  
(Note: Microdot may be in either location)  
V
x = Series Ratings  
ORDERING INFORMATION  
A
B
C
†
Device  
Package  
Shipping  
Maximum Pulse Surge Short Circuit  
Current Non-Repetitive  
Double Exponential Decay Waveform  
(Notes 1 and 2)  
A(pk)  
NP2600SA1T3G  
SMB  
(Pb-Free)  
2500/Tape & Reel  
2500/Tape & Reel  
2 x 10 ms  
150  
90  
50  
75  
50  
250  
150  
100  
100  
80  
500  
200  
150  
200  
100  
NP2600SB1T3G  
NP2600SC1T3G  
SMB  
(Pb-Free)  
10 x 160 ms  
10 x 560 ms  
5 x 310 ms  
SMB  
(Pb-Free)  
2500/Tape & Reel  
10 x 1000 ms  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
1. Allow cooling before testing second polarity.  
2. Measured under pulse conditions to reduce heating.  
3. Haefely test method.  
Preferred devices are recommended choices for future use  
and best overall value.  
This document contains information on a new product. Specifications and information  
herein are subject to change without notice.  
©ꢀ Semiconductor Components Industries, LLC, 2007  
June, 2007 - Rev. P0  
1
Publication Order Number:  
NP2600S/D  
 
123

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