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NP2600SAT3G

更新时间： 2024-11-21 03:46:11
品牌 Logo 应用领域
安森美 - ONSEMI 高压
页数 文件大小 规格书
5页 52K
描述
Thyristor Surge Protectors High Voltage Bidirectional

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中文翻译

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NP2600SAT3G 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：DO-214包装说明：SMALL OUTLINE, R-PDSO-C2
针数：2Reach Compliance Code：not_compliant
HTS代码：8541.30.00.80Factory Lead Time：1 week
风险等级：5.79其他特性：UL RECOGNIZED
最大转折电压：300 V配置：SINGLE
最大断态直流电压：220 V最大维持电流：150 mA
JEDEC-95代码：DO-214AAJESD-30 代码：R-PDSO-C2
JESD-609代码：e3元件数量：1
端子数量：2最高工作温度：150 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260认证状态：Not Qualified
子类别：Silicon Surge Protectors表面贴装：YES
端子面层：Tin (Sn)端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：40
触发设备类型：SILICON SURGE PROTECTORBase Number Matches：1

NP2600SAT3G 数据手册

 浏览型号NP2600SAT3G的Datasheet PDF文件第2页浏览型号NP2600SAT3G的Datasheet PDF文件第3页浏览型号NP2600SAT3G的Datasheet PDF文件第4页浏览型号NP2600SAT3G的Datasheet PDF文件第5页 
NP Series  
Preferred Devices  
Thyristor Surge Protectors  
High Voltage Bidirectional  
NP Series Thyristor Surge Protector Devices (TSPD) protect  
telecommunication circuits such as central office, access, and  
customer premises equipment from overvoltage conditions. These are  
bidirectional devices so they are able to have functionality of 2 devices  
in one package, saving valuable space on board layout.  
http://onsemi.com  
These devices will act as a crowbar when overvoltage occurs and will  
divert the energy away from circuit or device that is being protected.  
Use of the NP Series in equipment will help meet various regulatory  
requirements including: GR−1089−CORE, IEC 61000−4−5, ITU  
K.20/21/45, IEC 60950, TIA−968−A, FCC Part 68, EN 60950,  
UL 1950.  
BIDIRECTIONAL SURFACE  
MOUNT THYRISTOR  
64 − 350 VOLTS  
ELECTRICAL PARAMETERS  
MT1  
MT2  
V
V
V
I
I
I
I
H
DRM  
(BO)  
T
DRM  
(BO)  
T
V
V
V
mA  
mA  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
A
mA  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
Device  
NP0640SxT3G  
NP0720SxT3G  
NP0900SxT3G  
NP1100SxT3G  
NP1300SxT3G  
NP1500SxT3G  
NP1800SxT3G  
NP2100SxT3G  
NP2300SxT3G  
NP2600SxT3G  
NP3100SxT3G  
NP3500SxT3G  
58  
65  
75  
90  
77  
88  
98  
4
4
4
4
4
4
4
4
4
4
4
4
5
5
5
5
5
5
5
5
5
5
5
5
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
SMB  
JEDEC DO−214AA  
CASE 403C  
130  
160  
180  
220  
240  
260  
300  
350  
400  
120  
140  
170  
180  
190  
220  
275  
320  
MARKING DIAGRAM  
AYWW  
xxxxG  
G
xxxx  
Y
= Specific Device Code  
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
(Note: Microdot may be in either location)  
G = indicates leadfree, RoHS compliant  
SURGE DATA RATINGS  
Waveform  
x = series ratings  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 4 of  
this data sheet.  
Voltage  
Current  
ms  
ms  
A
150  
150  
90  
B
C
Specification  
GR−1089−CORE  
IEC 61000−4−5  
TIA−968−A  
Unit  
2x10  
1.2x50  
10x160  
10x360  
10x560  
10x700  
10x1000  
2x10  
8x20  
250  
250  
150  
125  
100  
100  
80  
500  
400  
200  
175  
150  
200  
100  
A(pk)  
Preferred devices are recommended choices for future use  
and best overall value.  
10x160  
10x360  
10x560  
5x310  
GR−1089−CORE  
TIA−968−A  
75  
50  
ITU−T K.20/21  
GR−1089−CORE  
75  
10x1000  
50  
*
Recognized Components  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
November, 2006 − Rev. 0  
NP0640S/D  
12345

中文翻译

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