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NP2600SBMCT3G PDF预览

NP2600SBMCT3G

更新时间： 2024-11-21 10:24:59
品牌 Logo 应用领域
安森美 - ONSEMI 光电二极管
页数 文件大小 规格书
7页 131K
描述
80A, Ultra Low Capacitance TSPD

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中文翻译

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NP2600SBMCT3G 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：DO-214包装说明：ROHS COMPLIANT, CASE 403C-01, SMB, 2 PIN
针数：2Reach Compliance Code：not_compliant
HTS代码：8541.30.00.80风险等级：5.82
其他特性：UL RECOGNIZED最大转折电压：300 V
配置：SINGLE最大断态直流电压：220 V
JEDEC-95代码：DO-214AAJESD-30 代码：R-PDSO-C2
JESD-609代码：e3湿度敏感等级：1
通态非重复峰值电流：30 A元件数量：1
端子数量：2最高工作温度：150 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
表面贴装：YES端子面层：Tin (Sn)
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED触发设备类型：SILICON SURGE PROTECTOR
Base Number Matches：1

NP2600SBMCT3G 数据手册

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NP-SBMC Series  
80A, Ultra Low Capacitance  
TSPD  
The NP−SBMC series of Low Capacitance Thyristor Surge  
Protection Devices (TSPD) protect sensitive electronic equipment  
from transient overvoltage conditions. Due to their ultra low off−state  
http://onsemi.com  
capacitance (C ), they offer minimal signal distortion for high speed  
o
equipment such as ADSL2+, VDSL and T1/E1 circuits. The low  
nominal offstate capacitance translates into the extremely low  
differential capacitance offering superb linearity with applied voltage  
or frequency. These reliable silicon devices are also a suitable  
alternative to GDT protectors.  
The NP−SBMC Series helps designers to comply with the various  
regulatory standards and recommendations including:  
GR−1089−CORE,IEC 61000−4−5, ITU K.20/K.21/K.45, IEC 60950,  
TIA−968−A,FCC Part 68, EN 60950, UL 1950.  
ULTRA LOW CAPACITANCE  
BIDIRECTIONAL SURFACE  
MOUNT THYRISTOR  
80A, 10x1000ms SURGE  
Features  
T
R
• Ultra Low − Micro Capacitance  
• Low Leakage (Transparent)  
• High Surge Current Capabilities  
• Precise Turn on Voltages  
• Low Voltage Overshoot  
• These are Pb−Free Devices  
SMB  
JEDEC DO−214AA  
CASE 403C  
Typical Applications  
• xDSL Central Office and Customer Premise  
• T1/E1  
• Other Broadband High Speed Data Transmission Equipment  
MARKING DIAGRAM  
ELECTRICAL CHARACTERISTICS  
AYWW  
xxxBMG  
G
C , 2 V,  
1 MHz  
C , 50 V,  
1 MHz  
O
O
V
V
(BO)  
DRM  
V
V
pF (Max)  
21  
pF (Max)  
10  
Device  
A
Y
WW  
xxx  
= Assembly Location  
= Year  
= Work Week  
= Specific Device Code  
(NPxxx0SBMC)  
= Pb−Free Package  
NP0640SBMCT3G  
NP0720SBMCT3G  
NP0900SBMCT3G  
NP1100SBMCT3G  
NP1300SBMCT3G  
NP1500SBMCT3G  
NP1800SBMCT3G  
NP2100SBMCT3G  
NP2300SBMCT3G  
NP2600SBMCT3G  
NP3100SBMCT3G  
NP3500SBMCT3G  
$58  
$65  
$77  
$88  
21  
10  
$75  
$98  
21  
10  
$90  
$130  
$160  
$180  
$220  
$240  
$260  
$300  
$350  
$400  
21  
10  
G
$120  
$140  
$170  
$180  
$190  
$220  
$275  
$320  
21  
10  
(Note: Microdot may be in either location)  
21  
10  
21  
10  
ORDERING INFORMATION  
21  
10  
†
Device  
Package  
Shipping  
21  
10  
NPxxx0SBMCT3G  
SMB  
(Pb−Free)  
2500 /Tape &  
Reel  
21  
10  
21  
10  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
21  
10  
G in part number indicates RoHS compliance  
Other protection voltages are available upon request  
Symmetrical Protection − Values the same in both negative and positive  
excursions  
(See V−I Curve on page 3)  
© Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
September, 2008 − Rev. 1  
NP3100SBMC/D  
1234567

中文翻译

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NP2600SBMCT3G 替代型号

型号 品牌 替代类型 描述 数据表
P2600SBLRP LITTELFUSE

功能相似

 The series provides a surface mount solution that enables equipment to comply

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