Datasheet > NP100N055PUH-E1-AY

NP100N055PUH-E1-AY

更新时间： 2024-02-20 10:49:14

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
11页	353K
描述
POWER, FET

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技术参数
数据手册

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NP100N055PUH-E1-AY 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.69
Base Number Matches：	1

NP100N055PUH-E1-AY 数据手册

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NP100N055MUH, NP100N055NUH, NP100N055PUH

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS

Zero Gate Voltage Drain Current

Gate Leakage Current

SYMBOL

IDSS

TEST CONDITIONS

VDS = 55 V, VGS = 0 V

MIN.

TYP.

MAX.

UNIT

μA

IGSS

VGS = 20 V, VDS = 0 V

VDS = VGS, ID = 250 μA

VDS = 10 V, ID = 50 A

100

4.0

Gate to Source Threshold Voltage

Forward Transfer Admittance ^Note

VGS(th)

2.0

3.0

| y^fs|

Drain to Source On-state Resistance ^Note

R^DS(on)

VGS = 10 V, ID = 50 A

3.9

3.6

4.9

4.5

mΩ

NP100N055MUH, NP100N055NUH

V^GS= 10 V, ID = 50 A

NP100N055PUH

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-on Delay Time

Rise Time

Ciss

Coss

Crss

td(on)

VDS = 25 V,

VGS = 0 V,

7000

1000

270

11000

1500

490

f = 1 MHz

VDD = 28 V, ID = 50 A,

VGS = 10 V,

RG = 0 Ω

Turn-off Delay Time

td(off)

180

Fall Time

Total Gate Charge

Gate to Source Charge

QGS

QGD

V^F(S-D)

trr

VDD = 44 V,

115

175

VGS = 10 V,

Gate to Drain Charge

Body Diode Forward Voltage ^Note

ID = 100 A

IF = 100 A, VGS = 0 V

IF = 100 A, VGS = 0 V,

di/dt = 100 A/μs

0.93

1.5

Reverse Recovery Time

Reverse Recovery Charge

Note Pulsed

Qrr

120

TEST CIRCUIT 1 AVALANCHE CAPABILITY

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

= 25 Ω

50 Ω

90%

Wave Form

10%

90%

PG.

GS = 20 → 0 V

BVDSS

10% 10%

Wave Form

d(on)

td(off)

off

τ = 1

μs

Duty Cycle ≤ 1%

Starting Tch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

= 2 mA

50 Ω

PG.

Data Sheet D18808EJ3V0DS

1 2 3 456 7 8...11

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