Datasheet > NP100N055PUK

NP100N055PUK

更新时间： 2022-11-28 01:25:39

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
8页	102K
描述
MOS FIELD EFFECT TRANSISTOR

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NP100N055PUK 数据手册

Preliminary Data Sheet

NP100N055PUK

MOS FIELD EFFECT TRANSISTOR

Description

R07DS0589EJ0100

Rev.1.00

Dec 12, 2011

The NP100N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features



Super low on-state resistance

_DS(on)= 3.25 m MAX. (V_GS= 10 V, I_D= 50 A)



Low C_iss: C_iss= 4900 pF TYP. (V_DS= 25 V)

Designed for automotive application and AEC-Q101 qualified

Ordering Information

Part No.

NP100N055PUK-E1-AY ^*

NP100N055PUK-E2-AY ^*

Lead Plating

Packing

Taping (E1 type)

Taping (E2 type)

Package

Pure Sn (Tin)

Tape 800 p/reel

TO-263 (MP-25ZP)

Note: *1 Pb-free (This product does not contain Pb in the external electrode)

Absolute Maximum Ratings (T_A= 25°C)

Item

Symbol

V_DSS

V_GSS

I_D(DC)

I_D(pulse)

P_T1

Ratings

Unit

Drain to Source Voltage (V_GS= 0 V)

Gate to Source Voltage (V_DS= 0 V)

Drain Current (DC) (T_C= 25°C)

20

100

400

176

Drain Current (pulse) ^*

Total Power Dissipation (T_C= 25°C)

Total Power Dissipation (T_A= 25°C)

Channel Temperature

°C

P_T2

1.8

T_ch

175

Storage Temperature

Repetitive Avalanche Current ^*

Repetitive Avalanche Energy ^*

T_stg

–55 to 175

I_AR

E_AR

144

Notes: *1 T_C= 25°C, P_W 10 s, Duty Cycle  1%

*2 R_G= 25 , V_GS= 20  0 V

Thermal Resistance

Channel to Case Thermal Resistance

Channel to Ambient Thermal Resistance

R_th(ch-C)

R_th(ch-A)

0.85

83.3

°C/W

R07DS0589EJ0100 Rev.1.00

Dec 12, 2011

Page 1 of 6

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NP100N055PUK-E2-AY	RENESAS	获取价格	MOS FIELD EFFECT TRANSISTOR
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NP100P04PDG-E1-AYNote	RENESAS	获取价格	SWITCHING P-CHANNEL POWER MOS FET
NP100P04PDG-E2-AY	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR
NP100P04PDG-E2-AYNote	RENESAS	获取价格	SWITCHING P-CHANNEL POWER MOS FET
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