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NP100N055PUH-E1-AY PDF预览

NP100N055PUH-E1-AY

更新时间: 2024-01-20 16:40:57
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
11页 353K
描述
POWER, FET

NP100N055PUH-E1-AY 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.69
Base Number Matches:1

NP100N055PUH-E1-AY 数据手册

 浏览型号NP100N055PUH-E1-AY的Datasheet PDF文件第4页浏览型号NP100N055PUH-E1-AY的Datasheet PDF文件第5页浏览型号NP100N055PUH-E1-AY的Datasheet PDF文件第6页浏览型号NP100N055PUH-E1-AY的Datasheet PDF文件第8页浏览型号NP100N055PUH-E1-AY的Datasheet PDF文件第9页浏览型号NP100N055PUH-E1-AY的Datasheet PDF文件第10页 
NP100N055MUH, NP100N055NUH, NP100N055PUH  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
FORWARD TRANSFER CHARACTERISTICS  
500  
400  
300  
200  
100  
0
1000  
100  
10  
T
ch = 200°C  
175°C  
150°C  
75°C  
25°C  
55°C  
1
0.1  
0.01  
0.001  
V
GS = 10 V  
V
DS = 10 V  
Pulsed  
Pulsed  
0
1
2
3
0
1
2
3
4
5
6
7
8
VDS - Drain to Source Voltage - V  
VGS - Gate to Source Voltage - V  
GATE TO SOURCE THRESHOLD VOLTAGE vs.  
CHANNEL TEMPERATURE  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
5
4
3
2
1
0
1000  
100  
10  
V
DS = VGS  
T
ch = 55°C  
25°C  
I
D
= 10 mA  
75°C  
150°C  
1
250 μA  
175°C  
200°C  
0.1  
V
DS = 10 V  
Pulsed  
0.01  
-75  
-25  
25  
75  
125  
175  
225  
0.01  
0.1  
1
10  
100  
ID - Drain Current - A  
Tch - Channel Temperature - °C  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
12  
10  
8
12  
10  
8
V
GS = 10 V  
Pulsed  
6
6
4
4
2
2
0
I
D
= 50 A  
Pulsed  
0
1
10  
100  
1000  
0
5
10  
15  
20  
ID - Drain Current - A  
VGS - Gate to Source Voltage - V  
5
Data Sheet D18808EJ3V0DS  

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